公开(公告)号：US20240218498A1

公开(公告)日：2024-07-04

申请号：US18091552

申请日：2022-12-30

Applicant: Applied Materials, Inc.

Inventor： Goichi YOSHIDOME ,  Xiangjin XIE

IPC: C23C14/35 ,  C23C14/34 ,  C23C14/54

CPC classification number: C23C14/35 ,  C23C14/345 ,  C23C14/54

Abstract: Methods and apparatus for processing a substrate are provided. In some embodiments, a method for processing a substrate includes: energizing a target disposed at a distance from a plurality of magnets disposed within a processing volume of a processing chamber, and moving the plurality of magnets either away from or closer to the target at a predetermined distance based on an inverse target voltage curve that is determined using a third order polynomial.

公开(公告)号：US20220380888A1

公开(公告)日：2022-12-01

申请号：US17334630

申请日：2021-05-28

Applicant: Applied Materials, Inc.

Inventor： Goichi YOSHIDOME ,  Suhas BANGALORE UMESH ,  Sushil Arun SAMANT ,  Martin Lee RIKER ,  Wei LEI ,  Kishor Kumar KALATHIPARAMBIL ,  Shirish A. PETHE ,  Fuhong ZHANG ,  Prashanth KOTHNUR ,  Andrew TOMKO

IPC: C23C14/35 ,  H01J37/34

Abstract: Methods of processing a substrate in a PVD chamber are provided herein. In some embodiments, a method of processing a substrate in a PVD chamber, includes: sputtering material from a target disposed in the PVD chamber and onto a substrate, wherein at least some of the material sputtered from the target is guided to the substrate through a magnetic field provided by one or more upper magnets disposed about a processing volume of the PVD chamber above a support pedestal for the substrate in the PVD chamber, one or more first magnets disposed about the support pedestal and providing an increased magnetic field strength at an edge region of the substrate, and one or more second magnets disposed below the support pedestal that increase a magnetic field strength at a central region of the substrate.

公开(公告)号：US20220384194A1

公开(公告)日：2022-12-01

申请号：US17334634

申请日：2021-05-28

Applicant: Applied Materials, Inc.

Inventor： Goichi YOSHIDOME

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/458

Abstract: A plasma vapor deposition (PVD) chamber used for depositing material includes an apparatus for influencing ion trajectories during deposition on a substrate. The apparatus includes at least one annular support assembly configured to be externally attached to and positioned below a substrate support pedestal and a magnetic field generator affixed to the annular support assembly and configured to radiate magnetic fields on a top surface of the substrate. The magnetic field generator may include a plurality of symmetrically spaced discrete permanent magnets or may use one or more electromagnets to generate the magnetic fields.

公开(公告)号：US20220384164A1

公开(公告)日：2022-12-01

申请号：US17507122

申请日：2021-10-21

Applicant: Applied Materials, Inc.

Inventor： Suhas BANGALORE UMESH ,  Kishor Kumar KALATHIPARAMBIL ,  Goichi YOSHIDOME

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/35

Abstract: A plasma vapor deposition (PVD) chamber used for depositing material includes an apparatus for influencing ion trajectories during deposition on a substrate. The apparatus includes at least one annular support assembly configured to be externally attached to and positioned below a substrate support pedestal and a magnetic field generator affixed to the annular support assembly and configured to radiate magnetic fields on a top surface of the substrate. The magnetic field generator may include a plurality of symmetrically spaced discrete permanent magnets or may use one or more electromagnets to generate the magnetic fields.

公开(公告)号：US20160233060A1

公开(公告)日：2016-08-11

申请号：US15015849

申请日：2016-02-04

Applicant: Applied Materials, Inc.

Inventor： Kadthala R. NARENDRNATH ,  Govinda RAJ ,  Goichi YOSHIDOME ,  Bopanna Ichettira VASANTHA ,  Umesh M. KELKAR

IPC: H01J37/32

Abstract: A chamber component for a processing chamber is disclosed herein. In one embodiment, a chamber component for a processing chamber includes a component part body having unitary monolithic construction. The component part body has a textured surface. The textured surface includes a plurality of independent engineered macro features integrally formed with the component part body. The engineered macro features include a macro feature body extending from the textured surface.

Abstract translation: 本文公开了一种用于处理室的腔室部件。 在一个实施例中，用于处理室的腔室部件包括具有单一整体结构的部件主体。 组件部件主体具有纹理表面。 纹理表面包括与组件部件主体整体形成的多个独立的工程宏观特征。 设计的宏观特征包括从纹理表面延伸的宏观特征体。