公开(公告)号：US20020145118A1

公开(公告)日：2002-10-10

申请号：US09832765

申请日：2001-04-10

Applicant: Applied Materials, Inc.

Inventor： Henry Pearce-Percy

IPC: G01K001/08 ,  H01J003/14 ,  H01J003/26

CPC classification number: H01L31/1185 ,  H01J37/244 ,  H01J2237/2441 ,  H01J2237/24475 ,  H01J2237/3175

Abstract: A backscattered electron detector capable of detecting electrons backscattered from a substrate includes a p-n junction diode having a p-doped semiconductor in contact with an n-doped semiconductor and a surface to receive the backscattered electrons. The backscattered electron detector also has a diode voltage source adapted to electrically bias the diode relative to the substrate by a diode bias voltage of at least about 500 V to increase the number or energy level of the backscattered electrons received by the diode. A signal amplifier may be used to process an input signal from the diode and generate an output signal that is amplified and passed to a controller that uses the amplified signal to locate a fiducial mark on the substrate.

Abstract translation: 能够检测从衬底反向散射的电子的反向散射电子检测器包括具有与n掺杂半导体接触的p掺杂半导体和接收反向散射电子的表面的p-n结二极管。 反向散射电子检测器还具有二极管电压源，其适于通过至少约500V的二极管偏置电压使二极管相对于衬底电偏压以增加由二极管接收的反向散射电子的数量或能级。 信号放大器可用于处理来自二极管的输入信号，并产生放大并传给使用放大信号的控制器的输出信号，以在基板上定位基准标记。