公开(公告)号：US20030180968A1

公开(公告)日：2003-09-25

申请号：US10235100

申请日：2002-09-04

Applicant: Applied Materials, Inc.

Inventor： Padmapani C. Nallan ,  Ajay Kumar ,  Jeng H. Hwang ,  Guangxiang Jin ,  Ralph Kerns

IPC: H01L021/00

CPC classification number: H01L23/564 ,  H01L21/67069 ,  H01L43/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for preventing electrical short circuits in a multi-layer magnetic film stack comprises providing a film stack that includes a layer of magnetic material having an exposed surface. A protective layer is deposited on the exposed surface of the magnetic layer. The protective layer may comprise, for example, a fluorocarbon or a hydrofluorocarbon. The film stack is etched and the protective layer protects the exposed surface from a conductive residue produced while etching the film stack. The method may be used in film stacks to form a magneto-resistive random access memory (MRAM) device.

Abstract translation: 一种用于防止多层磁性膜堆叠中的电短路的方法包括提供包括具有暴露表面的磁性材料层的膜堆叠。 保护层沉积在磁性层的暴露表面上。 保护层可以包括例如碳氟化合物或氢氟烃。 蚀刻薄膜叠层并且保护层保护暴露的表面免受在蚀刻薄膜叠层时产生的导电残留物。 该方法可以用于膜堆叠中以形成磁阻随机存取存储器（MRAM）装置。

公开(公告)号：US20030008517A1

公开(公告)日：2003-01-09

申请号：US09918671

申请日：2001-07-27

Applicant: Applied Materials, Inc.

Inventor： Yong Deuk Ko ,  Se Jin Oh ,  Chan Ouk Jung ,  Jeng H. Hwang

IPC: H01L021/302 ,  H01L021/461

CPC classification number: H01J37/32862 ,  H01L21/32136 ,  H01L21/32139 ,  Y10S438/905

Abstract: Contaminants are generated during etching processes for forming electrodes of storage capacitors for very high density future memory cells, such as ferroelectric random access memory (FeRAM) cells. These contaminants include significant quantities of noble metals, and in particular iridium and iridium compound particulates. In order to prevent undesirable iridium and iridium compound particulates from adversely affecting subsequent etching processes performed in the chamber, the plasma metal etch chamber is seasoned by exposing interior surfaces of the chamber to a seasoning plasma generated from a gas mixture comprising at least two gases selected from the group consisting of BCl3, HBr, and CF4. The chamber seasoning method of the invention is also applicable to etch processes involving other noble metals, such as platinum.

Abstract translation: 在用于形成用于非常高密度的未来存储单元（例如铁电随机存取存储器（FeRAM））单元的存储电容器的电极的蚀刻工艺期间产生污染物。 这些污染物包括大量的贵金属，特别是铱和铱化合物颗粒。 为了防止不期望的铱和铱化合物颗粒不利地影响在室中进行的随后的蚀刻工艺，等离子体金属蚀刻室通过将室的内表面暴露于由包含至少两种选择的气体的气体混合物产生的调味浆等来调节 由BCl3，HBr和CF4组成。 本发明的室调节方法也适用于涉及其它贵金属如铂的蚀刻工艺。

公开(公告)号：US20020072016A1

公开(公告)日：2002-06-13

申请号：US09737373

申请日：2000-12-13

Applicant: Applied Materials, Inc.

Inventor： Haojiang Chen ,  James S. Papanu ,  Mark Kawaguchi ,  Harald Herchen ,  Jeng H. Hwang ,  Guangxiang Jin ,  David Palagashvili

IPC: G03F007/36

CPC classification number: H01L21/02071 ,  G03F7/427 ,  H01L21/32136

Abstract: A method of processing a substrate 30 comprises exposing the substrate 30 to an energized process gas to etch features 67 on the substrate 30 and exposing the substrate 30 to an energized cleaning gas to remove etchant residue 70 and/or remnant resist 60 from the substrate 30. To enhance the cleaning process, the substrate 30 may be treated before, during or after the cleaning process by exposing the substrate 30 to an energized treating gas comprising a halogen species.

Abstract translation: 处理衬底30的方法包括将衬底30暴露于通电工艺气体以蚀刻衬底30上的特征67，并将衬底30暴露于通电的清洁气体以从衬底30去除蚀刻剂残留物70和/或残余抗蚀剂60 为了增强清洁过程，可以在清洁过程之前，之中或之后对衬底30进行处理，通过将衬底30暴露于包含卤素物质的通电处理气体中。

公开(公告)号：US20030170985A1

公开(公告)日：2003-09-11

申请号：US10092456

申请日：2002-03-06

Applicant: Applied Materials, Inc.

Inventor： Jeng H. Hwang ,  Guangxiang Jin ,  Xiaoyi Chen

IPC: H01L021/302

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  H01F41/308 ,  H01L43/12

Abstract: A method and apparatus for etching a magnetic memory cell stack are described. More particularly, HCl is used as a main etchant gas for etching a magnetic memory cell stack. HCl is used in part to reduce corrosion and improve selectivity. Additionally, use of an amorphous carbon or hydrocarbon based polymer resin for a hard mask is described, as well as a post-etch passivation with a water rinse, a water vapor plasma treatment or an ammonia plasma treatment. Moreover, in an embodiment, a diffusion barrier layer dispose most of the magnetic memory cell stack is etched with hydrogen and fluorine containing gas in a separate process

Abstract translation: 描述了用于蚀刻磁存储单元堆栈的方法和装置。 更具体地，HCl用作蚀刻磁存储单元堆叠的主蚀刻剂气体。 HCl部分用于减少腐蚀和提高选择性。 另外，描述了使用无定形碳或烃基聚合物树脂作为硬掩模，以及用水冲洗，水蒸气等离子体处理或氨等离子体处理的蚀刻后钝化。 此外，在一个实施例中，扩散阻挡层处理大部分磁存储单元堆叠被分别用氢气和含氟气体蚀刻

公开(公告)号：US20020139774A1

公开(公告)日：2002-10-03

申请号：US09747667

申请日：2000-12-22

Applicant: Applied Materials, Inc.

Inventor： Jeng H. Hwang ,  Xiaoyi Chen

IPC: B44C001/22 ,  C23F001/00

CPC classification number: C23F4/00 ,  H01L21/32136

Abstract: We have discovered a method of reducing the effect of material sputtered/etched during the preheating of a substrate. One embodiment of the method pertains to preheating a substrate which includes a metal-containing layer which is to be pattern etched subsequent to preheating. The method includes exposing the substrate to a preheating plasma which produces a deposit or residue during preheating which is more easily etched than said metal-containing layer during the subsequent plasma etching of said metal-containing layer.

Abstract translation: 我们已经发现了减少在衬底预热期间溅射/蚀刻的材料的影响的方法。 该方法的一个实施方案涉及预热衬底，其包括在预热之后被图案蚀刻的含金属层。 该方法包括将衬底暴露于预热等离子体中，其在预热期间产生沉积物或残留物，其在所述含金属层的随后等离子体蚀刻期间比所述含金属层更容易蚀刻。