公开(公告)号：US12153344B2

公开(公告)日：2024-11-26

申请号：US18241705

申请日：2023-09-01

Applicant: Applied Materials, Inc.

Inventor： Yongan Xu ,  Jinxin Fu ,  Jhenghan Yang ,  Ludovic Godet

IPC: G03F7/00 ,  G02B6/122 ,  G02B6/136 ,  H01L21/3065

Abstract: The present disclosure generally relates to methods of forming optical devices comprising nanostructures disposed on transparent substrates. A first process of forming the nanostructures comprises depositing a first layer of a first material on a glass substrate, forming one or more trenches in the first layer, and depositing a second layer of a second material in the one or more holes to trenches a first alternating layer of alternating first portions of the first material and second portions of the second material. The first process is repeated one or more times to form additional alternating layers over the first alternating layer. Each first portion of each alternating layer is disposed in contact with and offset a distance from an adjacent first portion in adjacent alternating layers. A second process comprises removing either the first or the second portions from each alternating layer to form the plurality of nanostructures.

公开(公告)号：US11754919B2

公开(公告)日：2023-09-12

申请号：US17534128

申请日：2021-11-23

Applicant: Applied Materials, Inc.

Inventor： Yongan Xu ,  Jinxin Fu ,  Jhenghan Yang ,  Ludovic Godet

IPC: G03F7/00 ,  H01L21/3065 ,  G02B6/122 ,  G02B6/136

CPC classification number: G03F7/0007 ,  G02B6/122 ,  G02B6/136

Abstract: The present disclosure generally relates to methods of forming optical devices comprising nanostructures disposed on transparent substrates. A first process of forming the nanostructures comprises depositing a first layer of a first material on a glass substrate, forming one or more trenches in the first layer, and depositing a second layer of a second material in the one or more holes to trenches a first alternating layer of alternating first portions of the first material and second portions of the second material. The first process is repeated one or more times to form additional alternating layers over the first alternating layer. Each first portion of each alternating layer is disposed in contact with and offset a distance from an adjacent first portion in adjacent alternating layers. A second process comprises removing either the first or the second portions from each alternating layer to form the plurality of nanostructures.

公开(公告)号：US11572619B2

公开(公告)日：2023-02-07

申请号：US16795232

申请日：2020-02-19

Applicant: Applied Materials, Inc.

Inventor： Jinrui Guo ,  Ludovic Godet ,  Rutger Meyer Timmerman Thijssen ,  Yongan Xu ,  Jhenghan Yang ,  Chien-An Chen

IPC: C23C16/04 ,  C23C16/56 ,  C23C16/30

Abstract: Embodiments of the present disclosure generally relate to processing a workpiece containing a substrate during deposition, etching, and/or curing processes with a mask to have localized deposition on the workpiece. A mask is placed on a first layer of a workpiece, which protects a plurality of trenches from deposition of a second layer. In some embodiments, the mask is placed before deposition of the second layer. In other embodiments, the second layer is cured before the mask is deposited. In other embodiments, the second layer is etched after the mask is deposited. Methods disclosed herein allow the deposition of a second layer in some of the trenches present in the workpiece, while at least partially preventing deposition of the second layer in other trenches present in the workpiece.