Die system and method of comparing alignment vectors

    公开(公告)号:US12159392B2

    公开(公告)日:2024-12-03

    申请号:US17753555

    申请日:2020-09-14

    Abstract: Embodiments of the present disclosure include a die system and a method of comparing alignment vectors. The die system includes a plurality of dies arranged in a desired pattern. An alignment vector, such as a die vector, can be determined from edge features of the die. The alignment vectors can be compared to other dies or die patterns in the same system. A method of comparing dies and die patterns includes comparing die vectors and/or pattern vectors. The comparison between alignment vectors allows for fixing the die patterns for the next round of processing. The methods provided allow accurate comparisons between as-deposited edge features, such that accurate stitching of dies can be achieved.

    Alignment mark for front to back side alignment and lithography for optical device fabrication

    公开(公告)号:US11815823B2

    公开(公告)日:2023-11-14

    申请号:US17947841

    申请日:2022-09-19

    CPC classification number: G03F9/7088 G03F7/70775

    Abstract: A method for aligning a substrate for fabrication of an optical device is disclosed that includes receiving a substrate having a first side and a second side opposite the first side, the first side of the substrate being oriented towards a scanner, the substrate having an alignment mark formed on the first side of the substrate, scanning the alignment mark with the scanner, and fabricating a first pattern for a first optical device on the first side of the substrate. The method includes positioning the substrate such that the second side is oriented toward the scanner, scanning the alignment mark on the first side with the scanner, through the second side, and fabricating a second pattern for a fourth optical device on the second side of the substrate.

    Lithography method to form structures with slanted angle

    公开(公告)号:US12153344B2

    公开(公告)日:2024-11-26

    申请号:US18241705

    申请日:2023-09-01

    Abstract: The present disclosure generally relates to methods of forming optical devices comprising nanostructures disposed on transparent substrates. A first process of forming the nanostructures comprises depositing a first layer of a first material on a glass substrate, forming one or more trenches in the first layer, and depositing a second layer of a second material in the one or more holes to trenches a first alternating layer of alternating first portions of the first material and second portions of the second material. The first process is repeated one or more times to form additional alternating layers over the first alternating layer. Each first portion of each alternating layer is disposed in contact with and offset a distance from an adjacent first portion in adjacent alternating layers. A second process comprises removing either the first or the second portions from each alternating layer to form the plurality of nanostructures.

    Methods of greytone imprint lithography to fabricate optical devices

    公开(公告)号:US12111572B2

    公开(公告)日:2024-10-08

    申请号:US18333290

    申请日:2023-06-12

    CPC classification number: G03F7/0005 G02B5/1857 G03F7/0002

    Abstract: A method of imprinting a pattern on a substrate is provided. The method includes forming a first pattern on a plurality of masters using a method other than imprinting, the first pattern including a plurality of patterned features of varying sizes; measuring the patterned features at a plurality of locations on each of the masters; selecting a first master of the plurality of masters based on the measurements of the patterned features on each of the masters; using the first master to form a second pattern on an imprint template; and imprinting the first pattern on a first device with the imprint template.

    System, software application, and method for lithography stitching

    公开(公告)号:US11237485B2

    公开(公告)日:2022-02-01

    申请号:US16748202

    申请日:2020-01-21

    Abstract: Embodiments of the present disclosure relate to methods for positioning masks in a propagation direction of a light source. The masks correspond to a pattern to be written into a photoresist layer of a substrate. The masks are positioned by stitching a first mask and a second mask. The first mask includes a set of first features having first feature extensions extending therefrom at first feature interfaces. The second mask includes a set of second features having second feature extensions extending therefrom at second feature interfaces. Each first feature extension stitches with each corresponding second feature extension to form each stitched portion of a first stitched portion of the first pair of masks. The stitched portion of the first pair of masks defines a portion of the pattern to be written into the photoresist layer.

    Lithography method to form structures with slanted angle

    公开(公告)号:US11754919B2

    公开(公告)日:2023-09-12

    申请号:US17534128

    申请日:2021-11-23

    CPC classification number: G03F7/0007 G02B6/122 G02B6/136

    Abstract: The present disclosure generally relates to methods of forming optical devices comprising nanostructures disposed on transparent substrates. A first process of forming the nanostructures comprises depositing a first layer of a first material on a glass substrate, forming one or more trenches in the first layer, and depositing a second layer of a second material in the one or more holes to trenches a first alternating layer of alternating first portions of the first material and second portions of the second material. The first process is repeated one or more times to form additional alternating layers over the first alternating layer. Each first portion of each alternating layer is disposed in contact with and offset a distance from an adjacent first portion in adjacent alternating layers. A second process comprises removing either the first or the second portions from each alternating layer to form the plurality of nanostructures.

    Methods of greytone imprint lithography to fabricate optical devices

    公开(公告)号:US11709423B2

    公开(公告)日:2023-07-25

    申请号:US17740116

    申请日:2022-05-09

    CPC classification number: G03F7/0005 G02B5/1857 G03F7/0002

    Abstract: A method of imprinting a pattern on a substrate is provided. The method includes forming a first pattern on a plurality of masters using a method other than imprinting, the first pattern including a plurality of patterned features of varying sizes; measuring the patterned features at a plurality of locations on each of the masters; selecting a first master of the plurality of masters based on the measurements of the patterned features on each of the masters; using the first master to form a second pattern on an imprint template; and imprinting the first pattern on a first device with the imprint template.

    Mask orientation
    8.
    发明授权

    公开(公告)号:US11630251B2

    公开(公告)日:2023-04-18

    申请号:US17571039

    申请日:2022-01-07

    Abstract: A method of forming patterned features on a substrate is provided. The method includes positioning a plurality of masks arranged in a mask layout over a substrate. The substrate is positioned in a first plane and the plurality of masks are positioned in a second plane, the plurality of masks in the mask layout have edges that each extend parallel to the first plane and parallel or perpendicular to an alignment feature on the substrate, the substrate includes a plurality of areas configured to be patterned by energy directed through the masks arranged in the mask layout. The method further includes directing energy towards the plurality of areas through the plurality of masks arranged in the mask layout over the substrate to form a plurality of patterned features in each of the plurality of areas.

    Method of thin film deposition in trenches

    公开(公告)号:US11572619B2

    公开(公告)日:2023-02-07

    申请号:US16795232

    申请日:2020-02-19

    Abstract: Embodiments of the present disclosure generally relate to processing a workpiece containing a substrate during deposition, etching, and/or curing processes with a mask to have localized deposition on the workpiece. A mask is placed on a first layer of a workpiece, which protects a plurality of trenches from deposition of a second layer. In some embodiments, the mask is placed before deposition of the second layer. In other embodiments, the second layer is cured before the mask is deposited. In other embodiments, the second layer is etched after the mask is deposited. Methods disclosed herein allow the deposition of a second layer in some of the trenches present in the workpiece, while at least partially preventing deposition of the second layer in other trenches present in the workpiece.

    Methods and apparatus of processing transparent substrates

    公开(公告)号:US11111176B1

    公开(公告)日:2021-09-07

    申请号:US16803956

    申请日:2020-02-27

    Abstract: Aspects of the present disclosure relate generally to methods and apparatus of processing transparent substrates, such as glass substrates. In one implementation, a film stack for optical devices includes a glass substrate including a first surface and a second surface. The film stack includes a device function layer formed on the first surface, a hard mask layer formed on the device function layer, and a substrate recognition layer formed on the hard mask layer. The hard mask layer includes one or more of chromium, ruthenium, or titanium nitride. The film stack includes a backside layer formed on the second surface. The backside layer formed on the second surface includes one or more of a conductive layer or an oxide layer.

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