公开(公告)号：US20250054770A1

公开(公告)日：2025-02-13

申请号：US18232991

申请日：2023-08-11

Applicant: Applied Materials, Inc.

Inventor： Jiajing Li ,  Mengjie Lyu ,  Menghui Li ,  Xiawan Yang ,  Olivier P. Joubert ,  Susumu Shinohara ,  Qian Fu

IPC: H01L21/311

Abstract: Exemplary semiconductor processing methods may include providing a fluorine-containing precursor and a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. A layer of oxygen-containing material may be disposed on the substrate. The methods may include forming plasma effluents of the fluorine-containing precursor and the carbon-containing precursor. The methods may include contacting the substrate with the plasma effluents of the fluorine-containing precursor and the carbon-containing precursor. The contacting may etch a feature in the layer of oxygen-containing material. A semiconductor processing chamber operating temperature may be maintained at less than or about 0° C. during the semiconductor processing method.

公开(公告)号：US20250054768A1

公开(公告)日：2025-02-13

申请号：US18232985

申请日：2023-08-11

Applicant: Applied Materials, Inc.

Inventor： Jiajing Li ,  Mengjie Lyu ,  Menghui Li ,  Xiawan Yang ,  Olivier P. Joubert ,  Susumu Shinohara ,  Qian Fu

IPC: H01L21/3065 ,  H01L21/308

Abstract: Exemplary semiconductor processing methods may include providing an oxygen-containing precursor and a sulfur-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. A layer of carbon-containing material may be disposed on the substrate. The methods may include forming plasma effluents of the oxygen-containing precursor and the sulfur-containing precursor. The methods may include contacting the substrate with the plasma effluents of the oxygen-containing precursor and the sulfur-containing precursor. The contacting may etch a feature in the layer of carbon-containing material. A chamber operating temperature may be maintained at less than or about 0° C.