公开(公告)号：US20140345803A1

公开(公告)日：2014-11-27

申请号：US14455409

申请日：2014-08-08

Applicant: Applied Materials, Inc.

Inventor： Valentin N. TODOROW ,  John P. HOLLAND ,  Michael D. WILLWERTH

IPC: C23F4/00 ,  H01L21/67

CPC classification number: C23F4/00 ,  C23F1/08 ,  H01J37/321 ,  H01J37/32633 ,  H01L21/67069

Abstract: A method and apparatus for etching a substrate using a spatially modified plasma is provided herein. In one embodiment, the method includes providing a process chamber having a plasma stabilizer disposed above a substrate support pedestal. A substrate is placed upon the pedestal. A process gas is introduced into the process chamber and a plasma is formed from the process gas. The substrate is etched with a plasma having an ion density to radical density ratio defined by the plasma stabilizer.

Abstract translation: 本文提供了使用空间修正等离子体蚀刻衬底的方法和设备。 在一个实施例中，该方法包括提供具有设置在基板支撑基座上方的等离子体稳定器的处理室。 将基板放置在基座上。 工艺气体被引入到处理室中，并且从处理气体形成等离子体。 用等离子体蚀刻衬底，该等离子体具有由等离子体稳定剂限定的离子密度与自由基密度比。