公开(公告)号：US20210305052A1

公开(公告)日：2021-09-30

申请号：US17347070

申请日：2021-06-14

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  Yihong Chen ,  Jared Ahmad Lee ,  Kevin Griffin ,  Srinivas Gandikota ,  Jospeh Yudovsky ,  Mandyam Sriram

IPC: H01L21/285 ,  H01L21/3205 ,  C23C16/06 ,  C23C16/455 ,  H01L21/28 ,  C23C16/14 ,  C23C16/452 ,  C23C16/458

Abstract: Methods of depositing a film by atomic layer deposition are described. The methods comprise exposing a substrate surface to a first process condition comprising a first reactive gas and a second reactive gas and exposing the substrate surface to a second process condition comprising the second reactive gas. The first process condition comprises less than a full amount of the second reactive gas for a CVD process.