公开(公告)号：US20250006507A1

公开(公告)日：2025-01-02

申请号：US18398532

申请日：2023-12-28

Applicant: Applied Materials, Inc.

Inventor： Yi ZHENG ,  Xiaozhou CHE ,  Qiang MA ,  Jun FANG

IPC: H01L21/324 ,  H01L21/02

Abstract: A method of forming a capping layer on a substrate for annealing processes incorporates an interfacial layer of a material that is at least one element of a chemical compound used in the substrate. In some embodiments, the method may comprise depositing an interfacial layer on the substrate where the interfacial layer is amorphous silicon (a-Si), amorphous SiCx, or amorphous SiCxN (where X is greater than zero to approximately 2), depositing an amorphous carbon (a-C) capping layer on the substrate, and annealing the substrate at a temperature of approximately 1500 degrees Celsius or higher. The interfacial layer may have a thickness of approximately 5 nanometers to approximately 100 nanometers and may be formed on planar structures or on three-dimensional structures.

公开(公告)号：US20250062122A1

公开(公告)日：2025-02-20

申请号：US18398564

申请日：2023-12-28

Applicant: Applied Materials, Inc.

Inventor： Jun FANG ,  Ludovico MEGALINI ,  Yi ZHENG ,  Jang Seok OH ,  Feng shou WANG

IPC: H01L21/027 ,  H01L21/02

Abstract: A method for forming an implant hard mask on a substrate provides a multi-layer hardmask resistant to high processing temperatures and ion energies. In some embodiments, the method may comprise depositing a screen layer of oxide material with a thickness of approximately 20 nm to approximately 100 nm, depositing a first layer of the implant hard mask of amorphous carbon with a second thickness of approximately 100 nm to approximately 3000 nm; depositing a second layer of the implant hard mask of oxide with a third thickness of approximately 100 nm to approximately 3000 nm; depositing a photoresist layer on the second layer of the implant hard mask, and patterning the photoresist layer to expose portions of the second layer of the implant hard mask, etching the second layer of the implant hard mask and then the first layer of the implant hard mask using a hard mask etch process to expose portions of the screen layer.