公开(公告)号：US20250062122A1

公开(公告)日：2025-02-20

申请号：US18398564

申请日：2023-12-28

Applicant: Applied Materials, Inc.

Inventor： Jun FANG ,  Ludovico MEGALINI ,  Yi ZHENG ,  Jang Seok OH ,  Feng shou WANG

IPC: H01L21/027 ,  H01L21/02

Abstract: A method for forming an implant hard mask on a substrate provides a multi-layer hardmask resistant to high processing temperatures and ion energies. In some embodiments, the method may comprise depositing a screen layer of oxide material with a thickness of approximately 20 nm to approximately 100 nm, depositing a first layer of the implant hard mask of amorphous carbon with a second thickness of approximately 100 nm to approximately 3000 nm; depositing a second layer of the implant hard mask of oxide with a third thickness of approximately 100 nm to approximately 3000 nm; depositing a photoresist layer on the second layer of the implant hard mask, and patterning the photoresist layer to expose portions of the second layer of the implant hard mask, etching the second layer of the implant hard mask and then the first layer of the implant hard mask using a hard mask etch process to expose portions of the screen layer.

公开(公告)号：US20230008858A1

公开(公告)日：2023-01-12

申请号：US17370835

申请日：2021-07-08

Applicant: Applied Materials, Inc.

Inventor： Ashish PAL ,  Yi ZHENG ,  El Mehdi BAZIZI

IPC: H01L29/06

Abstract: Embodiments of processing a substrate are provided herein. In some embodiments, a method of processing a substrate includes: depositing, via a first epitaxial growth process, an n-doped silicon material onto a substrate to form an n-doped layer while adjusting a ratio of dopant precursor to silicon precursor so that a dopant concentration of the n-doped layer increases from a bottom of the n-doped layer to a top of the n-doped layer; etching the n-doped layer to form a plurality of trenches having sidewalls that are tapered and a plurality of n-doped pillars therebetween; and filling the plurality of trenches with a p-doped material via a second epitaxial growth process to form a plurality of p-doped pillars.

公开(公告)号：US20140227820A1

公开(公告)日：2014-08-14

申请号：US13763295

申请日：2013-02-08

Applicant: Applied Materials, Inc.

Inventor： Jeffrey L. FRANKLIN ,  Yi ZHENG

IPC: H01L31/18

CPC classification number: H01L31/022425 ,  B23K26/0673 ,  B23K26/382 ,  B23K26/40 ,  B23K2103/50 ,  Y02E10/50

Abstract: Embodiments of the present invention generally provide methods for forming features or holes in a passivation layer without damaging the underlying solar cell substrate. A source laser beam is split into a first laser beam and a second laser beam. The first laser beam is modified to have a different wavelength than the source laser beam. The second laser beam is delayed for a predetermined time, and the first and second laser beams are delivered to a surface of the substrate.

Abstract translation: 本发明的实施例通常提供了在钝化层中形成特征或孔而不损坏下面的太阳能电池基板的方法。 源激光束被分成第一激光束和第二激光束。 第一激光束被修改为具有与源激光束不同的波长。 第二激光束被延迟预定时间，并且第一和第二激光束被传送到基板的表面。

公开(公告)号：US20250079186A1

公开(公告)日：2025-03-06

申请号：US18239414

申请日：2023-08-29

Applicant: Applied Materials, Inc.

Inventor： Yi ZHENG

IPC: H01L21/324 ,  H01L21/02 ,  H01L29/16

Abstract: A method for thermally processing an optically nonopaque substrate using radiant energy. In some embodiments, the method includes flipping the optically nonopaque substrate to expose a non-structure side, depositing an opaque thermal layer on the non-structure side of the optically nonopaque substrate where the opaque thermal layer has a uniform thickness, flipping the optically nonopaque substrate to expose the structure side, and thermally processing the optically nonopaque substrate in excess of approximately 900 degrees Celsius. In some embodiments, the opaque thermal layer is comprised of amorphous carbon, multiple layers of amorphous carbon with adjacent layers of the multiple layers having different optical properties, or alternating layers of different materials where a first layer of the alternating layers is comprised of amorphous carbon material and where a second layer of the alternating layers is comprised of amorphous silicon (Si)-based material.

公开(公告)号：US20140000686A1

公开(公告)日：2014-01-02

申请号：US13794238

申请日：2013-03-11

Applicant: Applied Materials, Inc.

Inventor： Hemant P. MUNGEKAR ,  Jeffrey L. FRANKLIN ,  Yi ZHENG ,  Lin ZHANG ,  Manoj VELLAIKAL

IPC: H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/02167 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Embodiments of the invention relate to methods for fabricating a passivation layer stack for photovoltaic devices. In one embodiment, the passivation layer stack comprises a first dielectric layer of AlxOy (or SiOx) and a second dielectric layer of SixNy having a refractive index less than 2.1. The passivation layer stack has contact openings formed therethrough by a series of pulsed laser beams having a wavelength of about 300-700 nm and a pulse width of about 0.01 nanosecond to about 3 nanoseconds. Lowering the refractive index of SixNy capping AlxOy (or SiOx) in the passivation layer stack makes pulsed laser beams less selective since the SixNy absorbs less laser energy. Therefore, desired regions of the entire passivation layer stack can be removed smoothly in a single pass of pulsed laser beams at a shorter wavelength without causing damage to the neighborhood of the passivation layer stack.

Abstract translation: 本发明的实施例涉及制造用于光伏器件的钝化层堆叠的方法。 在一个实施例中，钝化层堆叠包括Al x O y（或SiO x）的第一电介质层和具有小于2.1的折射率的SixNy的第二电介质层。 钝化层堆叠具有通过一系列具有约300-700nm的波长和约0.01纳秒至约3纳秒的脉冲宽度的脉冲激光束形成的接触开口。 降低钝化层堆叠中SixNy封盖AlxOy（或SiOx）的折射率使得脉冲激光束的选择性降低，因为SixNy吸收较少的激光能量。 因此，可以在短波长的脉冲激光束的单次通过中平滑地去除整个钝化层堆叠的期望区域，而不会损坏钝化层堆叠的附近。

公开(公告)号：US20250006507A1

公开(公告)日：2025-01-02

申请号：US18398532

申请日：2023-12-28

Applicant: Applied Materials, Inc.

Inventor： Yi ZHENG ,  Xiaozhou CHE ,  Qiang MA ,  Jun FANG

IPC: H01L21/324 ,  H01L21/02

Abstract: A method of forming a capping layer on a substrate for annealing processes incorporates an interfacial layer of a material that is at least one element of a chemical compound used in the substrate. In some embodiments, the method may comprise depositing an interfacial layer on the substrate where the interfacial layer is amorphous silicon (a-Si), amorphous SiCx, or amorphous SiCxN (where X is greater than zero to approximately 2), depositing an amorphous carbon (a-C) capping layer on the substrate, and annealing the substrate at a temperature of approximately 1500 degrees Celsius or higher. The interfacial layer may have a thickness of approximately 5 nanometers to approximately 100 nanometers and may be formed on planar structures or on three-dimensional structures.

公开(公告)号：US20230207638A1

公开(公告)日：2023-06-29

申请号：US17562938

申请日：2021-12-27

Applicant: Applied Materials, Inc.

Inventor： Yi ZHENG ,  Er-Xuan PING

IPC: H01L29/40 ,  H01L29/16 ,  H01L29/423 ,  H01L21/04

CPC classification number: H01L29/401 ,  H01L21/049 ,  H01L29/1608 ,  H01L29/4236

Abstract: A method of forming a gate structure on a substrate with increased charge mobility. In some embodiments, the method may include depositing an amorphous carbon layer on a silicon carbide layer on the substrate to form a capping layer on the silicon carbide layer, annealing the silicon carbide layer at a temperature of greater than approximately 1800° C., forming a hard mask on the silicon carbide layer by patterning the amorphous carbon layer, etching a trench structure of the gate structure into the silicon carbide layer using the hard mask, removing the hard mask to expose the silicon carbide layer, depositing a silicon dioxide layer on the silicon carbide layer using an ALD process, performing at least one interface treatment on the silicon dioxide layer, depositing a gate oxide layer of the gate structure on the silicon dioxide layer, and depositing a gate material on the gate oxide layer.