公开(公告)号：US20230042777A1

公开(公告)日：2023-02-09

申请号：US17971692

申请日：2022-10-24

Applicant: Applied Materials, Inc.

Inventor： Alexander N. LERNER ,  Roey SHAVIV ,  Prashanth KOTHNUR ,  Satish RADHAKRISHNAN ,  Xiaozhou CHE

IPC: C23C16/448 ,  C23C16/458 ,  C23C16/455 ,  C23C16/52 ,  C23C14/00 ,  C23C16/00

Abstract: One or more embodiments described herein generally relate to methods and systems for forming films on substrates in semiconductor processes. In embodiments described herein, a process system includes different materials each contained in separate ampoules. Each material is flowed into a separate portion of a showerhead contained within a process chamber via a heated gas line. From the showerhead, each material is flowed on to a substrate that sits on the surface of a rotating pedestal. Controlling the mass flow rate out of the showerhead and the rotation rate of the pedestal helps result in films with desirable material domain sizes to be deposited on the substrate.

公开(公告)号：US20210062325A1

公开(公告)日：2021-03-04

申请号：US17003969

申请日：2020-08-26

Applicant: Applied Materials, Inc.

Inventor： Jothilingam RAMALINGAM ,  Xiaozhou CHE ,  Yong CAO ,  Shane LAVAN ,  Chunming ZHOU

IPC: C23C14/35 ,  H01L21/02 ,  H01J37/32 ,  H01J37/34 ,  C23C14/06

Abstract: A method of depositing a backside film layer on a backside of a substrate includes loading a substrate having one or more films deposited on a front side of the substrate onto a substrate support of a processing chamber, depositing, from the sputter target, a target material on the backside of the substrate to form a backside layer on the backside of the substrate, and applying an RF bias to an electrode disposed within the substrate support while depositing the target material. The front side of the substrate faces the substrate support and is spaced from a top surface of the substrate support, and a backside of the substrate faces a sputter target of the processing chamber.

公开(公告)号：US20250006507A1

公开(公告)日：2025-01-02

申请号：US18398532

申请日：2023-12-28

Applicant: Applied Materials, Inc.

Inventor： Yi ZHENG ,  Xiaozhou CHE ,  Qiang MA ,  Jun FANG

IPC: H01L21/324 ,  H01L21/02

Abstract: A method of forming a capping layer on a substrate for annealing processes incorporates an interfacial layer of a material that is at least one element of a chemical compound used in the substrate. In some embodiments, the method may comprise depositing an interfacial layer on the substrate where the interfacial layer is amorphous silicon (a-Si), amorphous SiCx, or amorphous SiCxN (where X is greater than zero to approximately 2), depositing an amorphous carbon (a-C) capping layer on the substrate, and annealing the substrate at a temperature of approximately 1500 degrees Celsius or higher. The interfacial layer may have a thickness of approximately 5 nanometers to approximately 100 nanometers and may be formed on planar structures or on three-dimensional structures.

公开(公告)号：US20240240322A1

公开(公告)日：2024-07-18

申请号：US18096533

申请日：2023-01-12

Applicant: Applied Materials, Inc.

Inventor： Abhishek CHOWDHURY ,  Edwin C. SUAREZ ,  Xiaozhou CHE ,  Arun Chakravarthy CHAKRAVARTHY ,  Harisha SATHYANARAYANA ,  Nataraj BHASKAR RAO

IPC: C23C16/52 ,  C23C16/455 ,  C23C16/458

CPC classification number: C23C16/52 ,  C23C16/45565 ,  C23C16/4585

Abstract: Embodiments of process chambers are provided herein. In some embodiments, a process chamber includes: a chamber body having a bottom plate, a lid, and sidewalls extending from the bottom plate to the lid, wherein one of the sidewalls includes a shutter recess, wherein the chamber body and the shutter recess define an interior volume of the process chamber; a substrate support for supporting a substrate disposed in the interior volume; a showerhead disposed in the interior volume opposite the substrate support; and a shutter cover having a shutter disk coupled to a shutter arm, wherein the shutter cover is disposed in the interior volume and rotatably coupled to the chamber body between a home position and a cover position, wherein in the home position, the shutter cover is at least partially disposed in the shutter recess, and wherein in the cover position, the shutter cover extends over the substrate support.

公开(公告)号：US20230018891A1

公开(公告)日：2023-01-19

申请号：US17374189

申请日：2021-07-13

Applicant: Applied Materials, Inc.

Inventor： Xiaozhou CHE ,  Graeme Jamieson SCOTT ,  Richard Gustav HAGBORG ,  Alan H. OUYE ,  Nelson A. YEE

IPC: G01B17/02 ,  H01L21/66

Abstract: One or more embodiments described herein generally relate to methods and systems for monitoring film thickness using a sensor assembly. In embodiments described herein, a process chamber having a chamber body, a substrate support disposed in the chamber body, a lid disposed over the chamber body, and a sensor assembly coupled to the chamber body at a lower portion of the sensor assembly. The sensor assembly is coupled to the lid at an upper portion of the sensor assembly. The sensor assembly includes one or more apertures disposed through one or more sides of the sensor assembly, and the one or more sensors are disposed in the sensor assembly through the one or more of the apertures.