公开(公告)号：US11829073B2

公开(公告)日：2023-11-28

申请号：US17306527

申请日：2021-05-03

申请人： Applied Materials, Inc.

发明人： Arvinder Chadha ,  Kevin Laughton Cunningham

IPC分类号： G03F7/20 ,  G03F7/00

CPC分类号： G03F7/70408 ,  G03F7/2006 ,  G03F7/7005 ,  G03F7/70191

摘要： Embodiments described herein provide a method of large area lithography to decrease widths of portions written into photoresists. One embodiment of the method includes projecting an initial light beam of a plurality of light beams at a minimum wavelength to a mask in a propagation direction of the plurality of light beams. The mask has a plurality of dispersive elements. A wavelength of each light beam of the plurality of light beams is increased until a final light beam of the plurality of light beams is projected at a maximum wavelength. The plurality of dispersive elements of the mask diffract the plurality of light beams into order mode beams to produce an intensity pattern in a medium between the mask and a substrate having a photoresist layer disposed thereon. The intensity pattern having a plurality of intensity peaks writes a plurality of portions in the photoresist layer.

公开(公告)号：US11774851B2

公开(公告)日：2023-10-03

申请号：US17188684

申请日：2021-03-01

申请人： Applied Materials, Inc.

发明人： Kevin Laughton Cunningham ,  Manivannan Thothadri

IPC分类号： G03F7/00 ,  B29C33/38 ,  B29C33/40 ,  B29C43/02 ,  G03F7/20 ,  B29C43/38 ,  B82Y40/00 ,  G03F7/30

CPC分类号： G03F7/0002 ,  B29C33/3878 ,  B29C33/40 ,  B29C43/02 ,  B29C43/38 ,  B82Y40/00 ,  G03F7/2002 ,  G03F7/30 ,  B29K2909/02 ,  B29K2995/0027

摘要： Embodiments of the present disclosure generally relate to imprint lithography, and more particularly to methods and apparatus for creating a large area imprint without a seam. Methods disclosed herein generally include separating the curing time of the features in a stamp or product from the curing time of the seam and the periphery. The seam and periphery can be cured first or the seam and periphery can be cured last. Additionally, the seam curing operations can be performed on the master, on the stamp, or on the final product.

公开(公告)号：US10948818B2

公开(公告)日：2021-03-16

申请号：US15924763

申请日：2018-03-19

申请人： Applied Materials, Inc.

发明人： Kevin Laughton Cunningham ,  Manivannan Thothadri

IPC分类号： G03F7/00 ,  B29C33/38 ,  B29C43/02 ,  G03F7/20 ,  B29C33/40 ,  B82Y40/00 ,  G03F7/30 ,  B29C43/38

摘要： Embodiments of the present disclosure generally relate to imprint lithography, and more particularly to methods and apparatus for creating a large area imprint without a seam. Methods disclosed herein generally include separating the curing time of the features in a stamp or product from the curing time of the seam and the periphery. The seam and periphery can be cured first or the seam and periphery can be cured last. Additionally, the seam curing operations can be performed on the master, on the stamp, or on the final product.

公开(公告)号：US11036145B2

公开(公告)日：2021-06-15

申请号：US16230667

申请日：2018-12-21

申请人： Applied Materials, Inc.

发明人： Arvinder Chadha ,  Kevin Laughton Cunningham

IPC分类号： G03F7/20

摘要： Embodiments described herein provide a method of large area lithography to decrease widths of portions written into photoresists. One embodiment of the method includes projecting an initial light beam of a plurality of light beams at a minimum wavelength to a mask in a propagation direction of the plurality of light beams. The mask has a plurality of dispersive elements. A wavelength of each light beam of the plurality of light beams is increased until a final light beam of the plurality of light beams is projected at a maximum wavelength. The plurality of dispersive elements of the mask diffract the plurality of light beams into order mode beams to produce an intensity pattern in a medium between the mask and a substrate having a photoresist layer disposed thereon. The intensity pattern having a plurality of intensity peaks writes a plurality of portions in the photoresist layer.