MEGASONIC CLEAN WITH CAVITY PROPERTY MONITORING

    公开(公告)号:US20230241649A1

    公开(公告)日:2023-08-03

    申请号:US18133972

    申请日:2023-04-12

    CPC classification number: B08B3/123 G01B11/303 B08B13/00

    Abstract: Embodiments of megasonic cleaning chambers are provided herein. In some embodiments, a megasonic cleaning chamber includes: a chamber body defining an interior volume therein; a substrate support to support a substrate disposed in the interior volume; a supply tube comprising a transparent material configured to direct a cleaning fluid to the substrate support; a megasonic power generator coupled to the supply tube to provide megasonic power to the cleaning fluid; a megasonic transducer coupled to the megasonic power generator and the supply tube to create megasonic waves in the cleaning fluid and to form cavities in the cleaning fluid, wherein the megasonic transducer is configured to direct the megasonic waves and cavities toward the substrate support; and one or more sensors configured to generate a signal indicative of a property of the cavities in the cleaning fluid.

    Oxidation-Reduction Adjustable Plasma

    公开(公告)号:US20250157800A1

    公开(公告)日:2025-05-15

    申请号:US18388211

    申请日:2023-11-09

    Abstract: Methods and systems for treating a photomask are provided, which include producing a plasma comprising a radical species; measuring an optical emission spectrum of the radical species; and contacting the photomask with the radical species in a process chamber to remove a contaminant from a surface or to modify the surface of the photomask, wherein a presence of the radical species is controlled based at least in part on the measured optical emission spectrum.

    BAKING CHAMBER WITH SHROUD FOR MASK CLEAN

    公开(公告)号:US20220326608A1

    公开(公告)日:2022-10-13

    申请号:US17229584

    申请日:2021-04-13

    Abstract: Embodiments of baking chambers are provided herein. In some embodiments, a baking chamber for baking a substrate includes: a chamber body enclosing an interior volume; a heater disposed in the interior volume, wherein the heater is configured to have a surface temperature of about 100 to about 400 degrees Celsius during use; a shroud disposed in the interior volume opposite the heater, wherein the shroud includes a central opening fluidly coupled to a gas inlet; a plurality of substrate lift pins configured to support a substrate in the interior volume between the heater and the shroud, wherein the shroud includes a plurality of first openings to facilitate the plurality of substrate lift pins; and a gas outlet disposed in the chamber body opposite the shroud such that a gas flow path through the interior volume extends from the gas inlet, around the heater, and to the gas outlet.

    SINGLE-VOLUME BAKING CHAMBER FOR MASK CLEAN

    公开(公告)号:US20220326605A1

    公开(公告)日:2022-10-13

    申请号:US17226762

    申请日:2021-04-09

    Abstract: Embodiments of baking chambers for baking a substrate and methods of use thereof are provided herein. In some embodiments, a multi-chamber process tool for processing a substrate including: a wet clean chamber for cleaning the substrate; and a baking chamber configured to heat the substrate to remove residue or haze left over after a wet clean process performed in the wet clean chamber, the baking chamber comprising: a chamber body enclosing an interior volume; a heater disposed in the interior volume, wherein the heater is configured to have a surface temperature of about 100 to about 400 degrees Celsius during use; a substrate support configured to support a substrate disposed in the interior volume, wherein the substrate support has a direct line of sight with the heater such that the heater heats the substrate support via convection; and a gas inlet and a gas outlet coupled to the interior volume.

    METHOD FOR REMOVING PHOTORESIST FROM PHOTOMASK SUBSTRATE

    公开(公告)号:US20200328128A1

    公开(公告)日:2020-10-15

    申请号:US16453773

    申请日:2019-06-26

    Abstract: Methods and apparatus for removing a photoresist layer from a photomask substrate are provided. In one example, a method for removing a photoresist layer from a substrate in a chamber includes generating a first plasma including first radicals from a first gas mixture in a processing chamber, exposing a portion of a photoresist layer on a substrate to the first radicals to remove the portion of the photoresist layer from the substrate, generating a second plasma including second radicals from a second gas mixture, wherein the second radicals have a different composition than the first radicals, and exposing another portion of photoresist layer to the second radicals to remove the second portion of the photoresist layer.

    ULTRAVIOLET AND OZONE CLEAN SYSTEM
    9.
    发明公开

    公开(公告)号:US20240014028A1

    公开(公告)日:2024-01-11

    申请号:US18370481

    申请日:2023-09-20

    CPC classification number: B08B3/10 B08B3/041 B08B13/00 B08B2203/005

    Abstract: A cleaning apparatus for cleaning a substrate includes a lamp for emitting ultraviolet radiation in an irradiation region; a housing that houses the lamp; a water deflector spaced below the housing, the water deflector having a water inlet for receiving a supply of ozonated water and a water outlet for discharging ozonated water irradiated by the lamp into a substrate processing region beneath the water deflector, and defining a water flow path between the water inlet and the water outlet, the water flow path extending in the irradiation region; an upper reflector extending along and above the lamp; and a lower reflector extending along and below the water deflector, wherein the upper reflector and the lower reflector at least partially define the irradiation region and reflect ultraviolet radiation toward the water flow path, and wherein the lower reflector shields the substrate from ultraviolet radiation emitted by the lamp.

    METHODS AND APPARATUS FOR PHOTOMASK PROCESSING

    公开(公告)号:US20220326607A1

    公开(公告)日:2022-10-13

    申请号:US17228451

    申请日:2021-04-12

    Abstract: Methods and apparatus leverage dielectric barrier discharge (DBD) plasma to treat samples for surface modification prior to photomask application and for photomask cleaning. In some embodiments, a method of treating a surface with AP plasma includes igniting plasma over an ignition plate where the AP plasma is formed by one or more plasma heads of an AP plasma reactor positioned above the ignition plate, monitoring characteristics of the AP plasma with an optical emission spectrometer (OES) sensor to determine if stable AP plasma is obtained and, if so, moving the AP reactor over a central opening of an assistant plate where the central opening contains a sample under treatment and where the assistant plate reduces AP plasma arcing on the sample during treatment. The AP reactor scans back and forth over the central opening of the assistant plate while maintaining stabilized AP plasma to treat the sample.

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