公开(公告)号：US20190198338A1

公开(公告)日：2019-06-27

申请号：US15853243

申请日：2017-12-22

Applicant: Applied Materials, Inc.

Inventor： Sang Wook KIM ,  Zhibin WANG ,  Kyoungjin LEE ,  Byungkook KONG

IPC: H01L21/308 ,  H01L21/02 ,  H01L21/311 ,  H01L21/027

Abstract: Embodiments of the present disclosure generally provide a method and apparatus for forming features in a material layer utilizing EUV technologies. In one embodiment, a method of patterning a substrate includes disposing a patterned photoresist layer on a mask layer disposed on a substrate, wherein the patterned photoresist layer has openings with different widths defined in the patterned photoresist layer, forming a compensatory layer along sidewalls of the patterned photoresist layer to modify the widths of the openings and etching the mask layer through the openings with the modified width.