公开(公告)号：US20220005688A1

公开(公告)日：2022-01-06

申请号：US17342644

申请日：2021-06-09

Applicant: Applied Materials, Inc.

Inventor： NANCY FUNG ,  LARRY GAO

IPC: H01L21/027 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26 ,  C23C16/26 ,  C23C16/56 ,  C23C16/04 ,  H01L21/033

Abstract: Embodiments disclosed within include a method for etching a hardmask layer includes forming a photoresist layer comprising an organometallic material on a hardmask layer comprising a metal-containing material, exposing the photoresist layer to ultraviolet radiation through a mask having a selected pattern, removing un-irradiated areas of the photoresist layer to pattern the photoresist layer, forming a passivation layer comprising a carbon-containing material selectively on a top surface of the patterned photoresist layer, including selectively depositing passivation material over a top surface of a patterned photoresist layer trimming undesired portions of the passivation material, and etching the hardmask layer exposed by the patterned photoresist layer having the passivation layer formed thereon.