公开(公告)号：US20220005688A1

公开(公告)日：2022-01-06

申请号：US17342644

申请日：2021-06-09

Applicant: Applied Materials, Inc.

Inventor： NANCY FUNG ,  LARRY GAO

IPC: H01L21/027 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26 ,  C23C16/26 ,  C23C16/56 ,  C23C16/04 ,  H01L21/033

Abstract: Embodiments disclosed within include a method for etching a hardmask layer includes forming a photoresist layer comprising an organometallic material on a hardmask layer comprising a metal-containing material, exposing the photoresist layer to ultraviolet radiation through a mask having a selected pattern, removing un-irradiated areas of the photoresist layer to pattern the photoresist layer, forming a passivation layer comprising a carbon-containing material selectively on a top surface of the patterned photoresist layer, including selectively depositing passivation material over a top surface of a patterned photoresist layer trimming undesired portions of the passivation material, and etching the hardmask layer exposed by the patterned photoresist layer having the passivation layer formed thereon.

公开(公告)号：US20240319603A1

公开(公告)日：2024-09-26

申请号：US18581290

申请日：2024-02-19

Applicant: Applied Materials, Inc.

Inventor： ZHENXING HAN ,  MADHUR SACHAN ,  RUIYING HAO ,  NANCY FUNG ,  LIKUN WANG ,  GABRIELA ALVA

IPC: G03F7/16 ,  G03F7/004 ,  G03F7/20

CPC classification number: G03F7/162 ,  G03F7/0043 ,  G03F7/2002

Abstract: Embodiments disclosed herein include a method of patterning a substrate. In an embodiment, the method comprises depositing a metal-oxo layer over a substrate, and applying a chemically amplified resist (CAR) over the metal-oxo layer. In an embodiment, the method further comprises exposing the CAR, and developing the CAR to form a pattern in the CAR. In an embodiment, the method further comprises transferring the pattern into the metal-oxo layer, and transferring the pattern into the substrate.