公开(公告)号：US09552968B2

公开(公告)日：2017-01-24

申请号：US14277010

申请日：2014-05-13

Applicant: Applied Materials, Inc.

Inventor： Martin Deehan ,  Matt Cheng-Hsiung Tsai ,  Nan Lu ,  David T. Or ,  Mei Chang

IPC: B08B7/04 ,  H01J37/32 ,  B08B7/00 ,  H01L21/67

CPC classification number: H01J37/32862 ,  B08B7/0035 ,  H01L21/67069

Abstract: Embodiments of the present invention generally include an apparatus for plasma cleaning and a method for plasma cleaning. The apparatus can include a lid body having a first surface for facing a pedestal during cleaning and a second surface opposite the first surface and substantially parallel to the first surface, the second surface having a first indentation sized to receive a magnet assembly, one or more handles coupled to the second surface of the lid body, and the magnet assembly resting in the first indentation. The method can include removing a sputtering target from the processing chamber, sealing the processing chamber, introducing a gas into the processing chamber, applying an RF bias to a pedestal within the processing chamber, maintaining the pedestal at a substantially constant temperature, and removing material from the pedestal to clean the pedestal.

Abstract translation: 本发明的实施例通常包括用于等离子体清洗的装置和等离子体清洗方法。 该装置可以包括盖体，其具有用于在清洁期间面对基座的第一表面和与第一表面相对的第二表面并且基本上平行于第一表面，第二表面具有第一压痕，其尺寸设置成接收磁体组件，一个或多个 联接到盖体的第二表面的手柄以及静止在第一压痕中的磁体组件。 该方法可以包括从处理室移除溅射靶，密封处理室，将气体引入处理室，向处理室内的基座施加RF偏压，将基座保持在基本恒定的温度，以及去除材料 从基座上清洁基座。