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公开(公告)号:US20240222072A1
公开(公告)日:2024-07-04
申请号:US18091041
申请日:2022-12-29
Applicant: Applied Materials, Inc.
Inventor: Stephen Krause , Gary J. Rosen , Matthew Gaucher , Jay T. Scheuer , Frank Sinclair
IPC: H01J37/317 , H01J37/20 , H01J37/244
CPC classification number: H01J37/3171 , H01J37/20 , H01J37/244
Abstract: An ion implanter to facilitate channeling of an ion beam into a crystalline structure of a workpiece is disclosed. The ion implanter comprises an ion source to generate an ion beam, a platen to support the workpiece having the crystalline structure, an Xray source to generate an Xray beam, wherein at least a portion of the Xray beam impacts the workpiece to produce diffracted Xrays, an Xray detector positioned to receive the diffracted Xrays, and a controller, in communication with the Xray source, the platen, and the Xray detector. The controller contains instructions, which enable the ion implanter to perform a rocking curve test after the workpiece is disposed on the platen and calculate an orientation of the platen for an ion implant process based on a result of the rocking curve test to facilitate channeling of the ion beam into the crystalline structure of the workpiece.
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公开(公告)号:US20240222070A1
公开(公告)日:2024-07-04
申请号:US18387987
申请日:2023-11-08
Applicant: Applied Materials, Inc.
Inventor: Stephen Krause , Gary J. Rosen , Matthew Gaucher , Jay T. Scheuer , Frank Sinclair , Jonathan Lowder , Pratim Palit , Daniel Hall
IPC: H01J37/304 , H01J37/244 , H01J37/317
CPC classification number: H01J37/304 , H01J37/244 , H01J37/3171 , H01J2237/24578
Abstract: An ion implanter to facilitate channeling of an ion beam into a crystalline structure of a workpiece is disclosed. The ion implanter comprises an ion source to generate an ion beam, a platen to support the workpiece having the crystalline structure, an Xray source to generate an Xray beam, wherein at least a portion of the Xray beam impacts the workpiece to produce diffracted Xrays, an Xray detector positioned to receive the diffracted Xrays, and a controller, in communication with the Xray source, the platen, and the Xray detector. The controller contains instructions, which enable the ion implanter to perform a rocking curve test after the workpiece is disposed on the platen and calculate an orientation of the platen for an ion implant process based on a result of the rocking curve test to facilitate channeling of the ion beam into the crystalline structure of the workpiece.
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