公开(公告)号：US20250166880A1

公开(公告)日：2025-05-22

申请号：US18512941

申请日：2023-11-17

Applicant: Applied Materials, Inc. ,  The Florida International University Board of Trustees

Inventor： Mohammad Mohtasim Hamid Pial ,  Mudit Sunilkumar Khasgiwala ,  Markondeyaraj Pulugurtha ,  Subramani Kengeri ,  Kunal Ghosh ,  Meghna Maheshkumar Patel ,  Sachin Jayant Patil ,  Arvin Khosravi

IPC: H01F27/24 ,  H01F27/28 ,  H01F27/32 ,  H01F41/04

Abstract: An inductor may include a flexible polyimide flexible core may including one or more cavities. The inductor may include a magnetic film, formed on two sides of the flexible polyimide flexible core and on a respective sidewall of each of the one or more cavities. The inductor may include a dielectric layer formed on the magnetic film. The inductor may also include a metal layer formed on the dielectric layer and within the cavities, such that vias are formed on one or more sides of the inductor and extend through the one or more cavities.

公开(公告)号：US20250167132A1

公开(公告)日：2025-05-22

申请号：US18512439

申请日：2023-11-17

Applicant: Applied Materials, Inc. ,  The Florida International University Board of Trustees

Inventor： Ghaleb Saleh Ghaleb Al-Duhni ,  Mudit Sunilkumar Khasgiwala ,  Markondeyaraj Pulugurtha ,  Satheesh Bojja Venkatakrishnan ,  John Leonidas Volakis ,  Subramani Kengeri ,  Kunal Ghosh ,  Meghna Maheshkumar Patel ,  Sachin Jayant Patil ,  Arvin Khosravi

IPC: H01L23/552 ,  H01L23/13

Abstract: A shielding structure for a semiconductor device may include a first segment formed from a first set of layers including a first metal and a second metal. The structure may include a second segment formed from a second set of layers. The second set of layers may include the first metal and the second metal, the second segment orthogonal to the first segment, where the second segment is configured to be inserted into a trench in a substrate of the semiconductor device.

公开(公告)号：US20250166885A1

公开(公告)日：2025-05-22

申请号：US18512409

申请日：2023-11-17

Applicant: Applied Materials, Inc. ,  The Florida International University Board of Trustees

Inventor： Ghaleb Saleh Ghaleb Al-Duhni ,  Mudit Sunilkumar Khasgiwala ,  Markondeyaraj Pulugurtha ,  Mohammad Mohtasim Hamid Pial ,  Subramani Kengeri ,  Kunal Ghosh ,  Meghna Maheshkumar Patel ,  Sachin Jayant Patil ,  Arvin Khosravi

IPC: H01F27/36 ,  H01F27/24 ,  H01F41/02

Abstract: A scalable high-impedance component (SHIC) may include a flexible polyimide core may include one or more vias. The SHIC may include a magnetic film formed on one or more sides of the flexible polyimide core. The SHIC may include a polymer layer formed on the magnetic film, the polymer layer isolating the magnetic film and the flexible polyimide core. The SHIC may include a metal layer formed on the polymer layer and within the vias, such that the metal layer forms windings that extend through the one or more vias. The SHIC may include a magnetic paste disposed on the metal layer such that the SHIC shields a desired frequency of electromagnetic interference.

公开(公告)号：US20250079342A1

公开(公告)日：2025-03-06

申请号：US18239676

申请日：2023-08-29

Applicant: Applied Materials, Inc.

Inventor： Shailesh Mishra ,  Meghna Maheshkumar Patel

IPC: H01L23/00 ,  G06F21/60 ,  G06F21/72 ,  G06F21/73 ,  H01L25/065

Abstract: A chiplet-based system may include a first chiplet mounted to an interposer that is designated as being from one or more trusted sources, a second chiplet mounted to the interposer that is designated as not being from the one or more trusted sources, and an artificial intelligence (AI) accelerator. The AI accelerator may be programmed to monitor a state of the first chiplet, where the state may indicate an anomaly associated with the second chiplet. The AI accelerator may then select an action from a plurality of actions based at least in part on the state of the first chiplet, cause the action to be performed by the chiplet-based system, and execute a reinforcement learning algorithm update the plurality of actions based on a result of the action being performed.

公开(公告)号：US20230261570A1

公开(公告)日：2023-08-17

申请号：US17669702

申请日：2022-02-11

Applicant: Applied Materials, Inc.

Inventor： Meghna Maheshkumar Patel ,  Mudit Sunilkumar Khasgiwala

IPC: H02M3/156 ,  H02M3/00 ,  H02M1/00 ,  H01F29/00

CPC classification number: H02M3/156 ,  H02M3/003 ,  H02M1/0064 ,  H01F29/00

Abstract: An integrated voltage regulator (IVR) for on-chip integrated circuit applications may include a tunable inductor that may be adjusted to generate a target output for the IVR. The tunable inductor may include a piezoelectric material that may cause the relative permeability of the inductor to change based on an applied stimulus voltage. A control circuit may receive a target value, such as a target output voltage, and retrieve or calculate a target inductance value or voltage to be applied to the inductor to generate the target output value. A feedback circuit may monitor the output value and adjust the switching frequency or voltage applied to the inductor during operation in order to adjust the output value.