公开(公告)号：US20180174825A1

公开(公告)日：2018-06-21

申请号：US15890117

申请日：2018-02-06

Applicant: Applied Materials, Inc.

Inventor： Chun YAN ,  Xinyu BAO ,  Melitta Manyin HON ,  Hua CHUNG ,  Schubert S. CHU

IPC: H01L21/02 ,  H01L29/66

CPC classification number: H01L21/02057 ,  H01L29/66636 ,  H01L29/66795

Abstract: Implementations described herein generally provide a method of processing a substrate. Specifically, the methods described are used for cleaning and etching source/drain regions on a silicon substrate in preparation for precise Group IV source/drain growth in semiconductor devices. Benefits of this disclosure include precise fin size control in devices, such as 10 nm FinFET devices, and increased overall device yield. The method of integrated clean and recess includes establishing a low pressure processing environment in the processing volume, and maintaining the low pressure processing environment while flowing a first gas over a substrate in a processing volume, depositing a salt on the substrate, heating the processing volume to greater than 90° C., purging the processing volume with a second inert gas, and recessing a source/drain region disposed on the substrate.

公开(公告)号：US20180082836A1

公开(公告)日：2018-03-22

申请号：US15417496

申请日：2017-01-27

Applicant: Applied Materials, Inc.

Inventor： Chun YAN ,  Xinyu BAO ,  Melitta Manyin HON ,  Hua CHUNG ,  Schubert S. CHU

IPC: H01L21/02 ,  H01L29/66

CPC classification number: H01L21/02057 ,  H01L29/66636 ,  H01L29/66795

Abstract: Implementations described herein generally provide a method of processing a substrate. Specifically, the methods described are used for cleaning and etching source/drain regions on a silicon substrate in preparation for precise Group IV source/drain growth in semiconductor devices. Benefits of this disclosure include precise fin size control in devices, such as 10 nm FinFET devices, and increased overall device yield. The method of integrated clean and recess includes establishing a low pressure processing environment in the processing volume, and maintaining the low pressure processing environment while flowing a first gas over a substrate in a processing volume, depositing a salt on the substrate, heating the processing volume to greater than 90° C., purging the processing volume with a second inert gas, and recessing a source/drain region disposed on the substrate.

公开(公告)号：US20190035623A1

公开(公告)日：2019-01-31

申请号：US16148430

申请日：2018-10-01

Applicant: Applied Materials, Inc.

Inventor： Chun YAN ,  Xinyu BAO ,  Melitta Manyin HON ,  Hua CHUNG ,  Schubert S. CHU

IPC: H01L21/02 ,  H01L29/66

Abstract: Implementations described herein generally provide a method of processing a substrate. Specifically, the methods described are used for cleaning and etching source/drain regions on a silicon substrate in preparation for precise Group IV source/drain growth in semiconductor devices. Benefits of this disclosure include precise fin size control in devices, such as 10 nm FinFET devices, and increased overall device yield. The method of integrated clean and recess includes establishing a low pressure processing environment in the processing volume, and maintaining the low pressure processing environment while flowing a first gas over a substrate in a processing volume, depositing a salt on the substrate, heating the processing volume to greater than 90° C., purging the processing volume with a second inert gas, and recessing a source/drain region disposed on the substrate.

公开(公告)号：US20160035562A1

公开(公告)日：2016-02-04

申请号：US14445410

申请日：2014-07-29

Applicant: Applied Materials, Inc.

Inventor： Chun YAN ,  Xinyu BAO ,  Melitta Manyin HON

IPC: H01L21/02 ,  H01L29/161 ,  H01L21/311 ,  H01L29/16

CPC classification number: H01L21/02046 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02658

Abstract: A method for cleaning a substrate, such as a silicon substrate, a silicon-germanium substrate, or other silicon-containing substrate is disclosed. The method includes exposing the substrate to a first plasma configured to attack a sub-oxide on the substrate. The method also includes exposing the substrate to a second plasma configured to attack the native oxide on the substrate. The method further includes exposing the substrate to a gas containing at least one of molecular chlorine or a chlorine compound. The gas may be configured to remove at least some of the remaining native oxide and sub-oxide. After the cleaning process, the substrate may be further processed. Further processing steps may include, for example, an epitaxial growth process. An epitaxial growth process performed on a substrate cleaned according to the methods disclosed herein will exhibit few defects.

Abstract translation: 公开了一种用于清洁诸如硅衬底，硅锗衬底或其它含硅衬底的衬底的方法。 该方法包括将衬底暴露于构造成攻击衬底上的次氧化物的第一等离子体。 该方法还包括将衬底暴露于配置成攻击衬底上的自然氧化物的第二等离子体。 该方法还包括将基底暴露于含有分子氯或氯化合物中的至少一种的气体。 气体可以被配置为去除至少一些剩余的天然氧化物和亚氧化物。 在清洁处理之后，可以进一步处理基板。 另外的处理步骤可以包括例如外延生长工艺。 在根据本文公开的方法清洁的基底上进行的外延生长工艺将显示出很少的缺陷。