公开(公告)号：US20180277649A1

公开(公告)日：2018-09-27

申请号：US15933072

申请日：2018-03-22

Applicant: Applied Materials, Inc.

Inventor： Zhiyuan YE ,  Xinyu BAO ,  Chun YAN ,  Hua CHUNG ,  Schubert S. CHU ,  Satheesh KUPPURAO

IPC: H01L29/66 ,  H01L21/8234 ,  H01L21/8252 ,  H01L21/3105 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L29/6681 ,  H01L21/02546 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/0274 ,  H01L21/31053 ,  H01L21/31116 ,  H01L21/67167 ,  H01L21/823431 ,  H01L21/8252

Abstract: Methods of sub-10 nm fin formation are disclosed. One method includes patterning a first dielectric layer on a substrate to form one or more projections and a first plurality of spaces, and depositing a first plurality of columns in the first plurality of spaces. The first plurality of columns are separated by a second plurality of spaces. The method also includes depositing a second dielectric layer in the second plurality of spaces to form a plurality of dummy fins, removing the first plurality of columns to form a third plurality of spaces, depositing a second plurality of columns in the third plurality of spaces, removing the one or more projections and the plurality of dummy fins to form a fourth plurality of spaces, and depositing a plurality of fins in the fourth plurality of spaces. The plurality of fins have a width between 5-10 nm.

公开(公告)号：US20180174825A1

公开(公告)日：2018-06-21

申请号：US15890117

申请日：2018-02-06

Applicant: Applied Materials, Inc.

Inventor： Chun YAN ,  Xinyu BAO ,  Melitta Manyin HON ,  Hua CHUNG ,  Schubert S. CHU

IPC: H01L21/02 ,  H01L29/66

CPC classification number: H01L21/02057 ,  H01L29/66636 ,  H01L29/66795

Abstract: Implementations described herein generally provide a method of processing a substrate. Specifically, the methods described are used for cleaning and etching source/drain regions on a silicon substrate in preparation for precise Group IV source/drain growth in semiconductor devices. Benefits of this disclosure include precise fin size control in devices, such as 10 nm FinFET devices, and increased overall device yield. The method of integrated clean and recess includes establishing a low pressure processing environment in the processing volume, and maintaining the low pressure processing environment while flowing a first gas over a substrate in a processing volume, depositing a salt on the substrate, heating the processing volume to greater than 90° C., purging the processing volume with a second inert gas, and recessing a source/drain region disposed on the substrate.

公开(公告)号：US20180033659A1

公开(公告)日：2018-02-01

申请号：US15414326

申请日：2017-01-24

Applicant: Applied Materials, Inc.

Inventor： Chun YAN ,  Xinyu BAO

IPC: H01L21/67 ,  B08B15/00 ,  C30B33/00 ,  C30B25/12 ,  C30B25/08 ,  C30B25/14

CPC classification number: H01L21/67201 ,  B08B15/00 ,  B08B15/02 ,  B08B2215/003 ,  C23C16/45508 ,  C23C16/4551 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45576 ,  C23C16/4558 ,  C30B25/08 ,  C30B25/12 ,  C30B25/14 ,  C30B33/00 ,  H01L21/67017

Abstract: Embodiments disclosed herein generally relate to a system, method, and apparatus for controlling substrate outgassing such that hazardous gasses are eliminated from a surface of a substrate after a III-V epitaxial growth process or an etch clean process, and prior to additional processing. An oxygen containing gas is flowed to a substrate in a load lock chamber, and subsequently a non-reactive gas is flowed to the substrate in the load lock chamber. As such, hazardous gases and outgassing residuals are decreased and/or removed from the substrate such that further processing may be performed.

公开(公告)号：US20180033621A1

公开(公告)日：2018-02-01

申请号：US15417556

申请日：2017-01-27

Applicant: Applied Materials, Inc.

Inventor： Xinyu BAO ,  Chun YAN ,  Errol Antonio C. SANCHEZ

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02513 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02516 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/31111

Abstract: The present disclosure generally relate to methods of processing a substrate in an epitaxy chamber. The method includes applying a passivating agent containing antimony to portions of a silicon substrate exposed through trenches formed in a dielectric layer on the silicon substrate, while applying the passivating agent containing antimony, exposing the silicon substrate to a group IV-containing precursor to form an epitaxial layer having a V-shaped structure having an exposed (111) plane at a bottom of the trenches, and forming a semiconductor layer on the epitaxial layer.

公开(公告)号：US20160141175A1

公开(公告)日：2016-05-19

申请号：US14540104

申请日：2014-11-13

Applicant: Applied Materials, Inc.

Inventor： Chun YAN ,  Xinyu BAO

IPC: H01L21/02 ,  B08B7/04 ,  B08B5/00 ,  B08B7/00

CPC classification number: H01L21/02661 ,  B08B5/00 ,  B08B7/0035 ,  B08B7/0071 ,  B08B7/04 ,  H01L21/02046 ,  H01L21/0206 ,  H01L21/0245 ,  H01L21/02455 ,  H01L21/02538 ,  H01L21/67115

Abstract: Native oxides and residue are removed from surfaces of a substrate by performing a multiple-stage native oxide cleaning process. In one example, the method for removing native oxides from a substrate includes supplying a first gas mixture including an inert gas onto a surface of a material layer disposed on a substrate into a first processing chamber, wherein the material layer is a III-V group containing layer for a first period of time, supplying a second gas mixture including an inert gas and a hydrogen containing gas onto the surface of the material layer for a second period of time, and supplying a third gas mixture including a hydrogen containing gas to the surface of the material layer while maintaining the substrate at a temperature less than 550 degrees Celsius.

Abstract translation: 通过进行多级自然氧化物清洗工艺，从基底的表面除去天然氧化物和残余物。 在一个实例中，用于从衬底去除天然氧化物的方法包括将包含惰性气体的第一气体混合物供应到设置在衬底上的材料层的表面上的第一处理室中，其中材料层为III-V族 将含有惰性气体和含氢气体的第二气体混合物供给到所述材料层的表面上第二时间段，并将含有含氢气体的第三气体混合物供给到所述第二气体混合物 同时将基板保持在低于550摄氏度的温度。

公开(公告)号：US20180082836A1

公开(公告)日：2018-03-22

申请号：US15417496

申请日：2017-01-27

Applicant: Applied Materials, Inc.

Inventor： Chun YAN ,  Xinyu BAO ,  Melitta Manyin HON ,  Hua CHUNG ,  Schubert S. CHU

IPC: H01L21/02 ,  H01L29/66

CPC classification number: H01L21/02057 ,  H01L29/66636 ,  H01L29/66795

Abstract: Implementations described herein generally provide a method of processing a substrate. Specifically, the methods described are used for cleaning and etching source/drain regions on a silicon substrate in preparation for precise Group IV source/drain growth in semiconductor devices. Benefits of this disclosure include precise fin size control in devices, such as 10 nm FinFET devices, and increased overall device yield. The method of integrated clean and recess includes establishing a low pressure processing environment in the processing volume, and maintaining the low pressure processing environment while flowing a first gas over a substrate in a processing volume, depositing a salt on the substrate, heating the processing volume to greater than 90° C., purging the processing volume with a second inert gas, and recessing a source/drain region disposed on the substrate.

公开(公告)号：US20180082835A1

公开(公告)日：2018-03-22

申请号：US15417466

申请日：2017-01-27

Applicant: Applied Materials, Inc.

Inventor： Chun YAN ,  Xinyu BAO ,  Hua CHUNG ,  Schubert S. CHU

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/67 ,  B08B7/00

CPC classification number: H01L21/02046 ,  B08B7/0035 ,  B08B7/0057 ,  C23C16/4401 ,  C23C16/56 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02664 ,  H01L21/2686 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/67017 ,  H01L21/67034 ,  H01L21/67069 ,  H01L21/67115

Abstract: Implementations disclosed herein relate to methods for controlling substrate outgassing of hazardous gasses after an epitaxial process. In one implementation, the method includes providing a substrate comprising an epitaxial layer into a transfer chamber, wherein the transfer chamber has an ultraviolet (UV) lamp module disposed adjacent to a top ceiling of the transfer chamber, flowing an oxygen-containing gas into the transfer chamber through a gas line of the transfer chamber, flowing a non-reactive gas into the transfer chamber through the gas line of the transfer chamber, activating the UV lamp module to oxidize residues or species on a surface of the substrate to form an outgassing barrier layer on the surface of the substrate, ceasing the flow of the oxygen-containing gas and the nitrogen-containing gas into the transfer chamber, pumping the transfer chamber, and deactivating the UV lamp module.

公开(公告)号：US20180076031A1

公开(公告)日：2018-03-15

申请号：US15418190

申请日：2017-01-27

Applicant: Applied Materials, Inc.

Inventor： Chun YAN ,  Xinyu BAO ,  Hua CHUNG ,  Schubert S. CHU

IPC: H01L21/02 ,  H01L29/78 ,  H01L29/08

CPC classification number: H01L21/02664 ,  C23C14/021 ,  C23C14/022 ,  C23C14/5826 ,  C23C14/5873 ,  C23C16/0245 ,  C23C16/24 ,  C23C16/56 ,  H01L21/02236 ,  H01L21/02252 ,  H01L21/02293 ,  H01L21/02315 ,  H01L21/0234 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02661 ,  H01L21/2018 ,  H01L21/2033 ,  H01L21/76855 ,  H01L29/0847 ,  H01L29/66795 ,  H01L29/785

Abstract: Implementations disclosed herein relate to methods for controlling substrate outgassing. In one implementation, the method includes removing oxides from an exposed surface of a substrate in an inductively coupled plasma chamber, forming an epitaxial layer on the exposed surface of the substrate in an epitaxial deposition chamber, and performing an outgassing control of the substrate by subjecting the substrate to a first plasma formed from a first etch precursor in the inductively coupled plasma chamber at a first chamber pressure, wherein the first etch precursor comprises a hydrogen-containing precursor, a chlorine-containing precursor, and an inert gas, and subjecting the substrate to a second plasma formed from a second etch precursor in the inductively coupled plasma chamber at a second chamber pressure that is higher than the first chamber pressure, wherein the second etch precursor comprises a hydrogen-containing precursor and an inert gas.

公开(公告)号：US20170162379A1

公开(公告)日：2017-06-08

申请号：US15340292

申请日：2016-11-01

Applicant: Applied Materials, Inc.

Inventor： Chun YAN ,  Xinyu BAO

IPC: H01L21/02 ,  H01L21/67 ,  B08B5/00 ,  H01L21/306

CPC classification number: H01L21/02065 ,  B08B5/00 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/30621 ,  H01L21/67023

Abstract: Embodiments described herein generally relate to improved methods and solutions for cleaning a substrate prior to epitaxial growth of Group III-V channel materials. A first processing gas, which includes a noble gas and a hydrogen source, is used to remove the native oxide layer from the substrate surface. A second processing gas, Ar/Cl2/H2, is then used to create a reactive surface layer on the substrate surface. Finally, a hydrogen bake with a third processing gas, which includes a hydrogen source and an arsine source, is used to remove the reactive layer from the substrate surface.

公开(公告)号：US20190013221A1

公开(公告)日：2019-01-10

申请号：US15641963

申请日：2017-07-05

Applicant: Applied Materials, Inc.

Inventor： Chun YAN

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/673 ,  H01J37/32

Abstract: Embodiments of the present disclosure provide methods for conditioning a plasma processing chamber to maintain a reliable and predicable processing conditions while performing a oxide removal process on a substrate. In one embodiment, a method for conditioning a plasma processing chamber includes supplying a first gas mixture including an inert gas into a processing chamber a first period of time in absent of a substrate, supplying a second gas mixture including an inert gas, a hydrogen containing gas and a halogen containing gas for a second period of time in absent of the substrate, and supplying a third gas mixture including an inert gas and a hydrogen containing gas for a third period of time in absent of the substrate in the processing chamber.