公开(公告)号：US11495461B2

公开(公告)日：2022-11-08

申请号：US16800351

申请日：2020-02-25

Applicant: Applied Materials, Inc.

Inventor： Tejinder Singh ,  Suketu Arun Parikh ,  Daniel Lee Diehl ,  Michael Anthony Stolfi ,  Jothilingam Ramalingam ,  Yong Cao ,  Lifan Yan ,  Chi-I Lang ,  Hoyung David Hwang

IPC: H01L21/033 ,  H01L21/311

Abstract: Methods for forming a film stack comprising a hardmask layer and etching such hardmask layer to form features in the film stack are provided. The methods described herein facilitate profile and dimension control of features through a proper profile management scheme formed in the film stack. In one or more embodiments, a method for etching a hardmask layer includes forming a hardmask layer on a substrate, where the hardmask layer contains a metal-containing material containing a metal element having an atomic number greater than 28, supplying an etching gas mixture to the substrate, and etching the hardmask layer exposed by a photoresist layer.