公开(公告)号：US10373822B2

公开(公告)日：2019-08-06

申请号：US15816520

申请日：2017-11-17

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar Kulshreshtha ,  Sudha Rathi ,  Praket P. Jha ,  Saptarshi Basu ,  Kwangduk Douglas Lee ,  Martin J. Seamons ,  Bok Hoen Kim ,  Ganesh Balasubramanian ,  Ziqing Duan ,  Lei Jing ,  Mandar B. Pandit

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/033 ,  H01L21/66 ,  C23C16/26 ,  C23C16/04 ,  H01L21/311

Abstract: Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.

公开(公告)号：US09390910B2

公开(公告)日：2016-07-12

申请号：US14549380

申请日：2014-11-20

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar Kulshreshtha ,  Sudha Rathi ,  Praket P. Jha ,  Saptarshi Basu ,  Kwangduk Douglas Lee ,  Martin J. Seamons ,  Bok Hoen Kim ,  Ganesh Balasubramanian ,  Ziqing Duan ,  Lei Jing ,  Mandar B. Pandit

IPC: H01L21/443 ,  H01L21/02 ,  H01L21/66 ,  H01L21/033 ,  C23C16/458 ,  C23C16/46 ,  C23C16/455

CPC classification number: H01L21/02274 ,  C23C16/04 ,  C23C16/26 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/45508 ,  C23C16/45565 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/02115 ,  H01L21/0337 ,  H01L21/31144 ,  H01L22/12

Abstract: Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.

Abstract translation: 用于调制一个或多个图案化膜的局部应力和覆盖误差的方法可以包括调节引入室主体的气体的气流分布，将腔体内的气体朝向衬底流动，旋转衬底， 通过使用双区加热器控制基板温度，来实现基板的边缘温度分布。 用于沉积膜的室可以包括包括一个或多个处理区域的室主体。 腔室主体可以包括气体分配组件，其具有用于将气体输送到一个或多个处理区域中的阻挡板。 阻挡板可以具有第一区域和第二区域，并且第一区域和第二区域各自可以具有多个孔。 腔体可以具有双区加热器。

公开(公告)号：US10541169B2

公开(公告)日：2020-01-21

申请号：US15593502

申请日：2017-05-12

Applicant: Applied Materials, Inc.

Inventor： Chong Jiang ,  Lei Jing ,  Mingte Liu ,  Adolph Miller Allen ,  Michael W. Johnson ,  Pallavi Zhang ,  Michael D. Armacost

IPC: H01L21/683

Abstract: Embodiments of the disclosure relate to methods and a system for adjusting the chucking voltage of an electrostatic chuck. In one embodiment, a system for plasma processing a substrate includes a plasma processing chamber, a radio-frequency (RF) matching circuit coupled to the chamber, a sensor and a controller. The chamber includes a chamber body having an inner volume, a bipolar electrostatic chuck disposed in the inner volume and a power supply configured to provide chucking voltage to a pair of electrodes embedded within the electrostatic chuck. When plasma is energized within the chamber by the application of RF power through an RF matching circuit, the sensor is configured to detect a change in an electrical characteristic at the RF matching circuit. The controller is coupled to the power supply and configured to adjust the chucking voltage in response to the change in the electrical characteristic detected by the sensor.

公开(公告)号：US10100408B2

公开(公告)日：2018-10-16

申请号：US14594296

申请日：2015-01-12

Applicant: Applied Materials, Inc.

Inventor： Sungwon Ha ,  Kwangduk Douglas Lee ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Martin Jay Seamons ,  Ziqing Duan ,  Zheng John Ye ,  Bok Hoen Kim ,  Lei Jing ,  Ngoc Le ,  Ndanka Mukuti

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/458 ,  C23C16/509 ,  H01J37/32

Abstract: Embodiments described herein relate to a faceplate for improving film uniformity. A semiconductor processing apparatus includes a pedestal, an edge ring and a faceplate having distinct regions with differing hole densities. The faceplate has an inner region and an outer region which surrounds the inner region. The inner region has a greater density of holes formed therethrough when compared to the outer region. The inner region is sized to correspond with a substrate being processed while the outer region is sized to correspond with the edge ring.

公开(公告)号：US09837265B2

公开(公告)日：2017-12-05

申请号：US15192732

申请日：2016-06-24

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar Kulshreshtha ,  Sudha Rathi ,  Praket P. Jha ,  Saptarshi Basu ,  Kwangduk Douglas Lee ,  Martin J. Seamons ,  Bok Hoen Kim ,  Ganesh Balasubramanian ,  Ziqing Duan ,  Lei Jing ,  Mandar B. Pandit

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/033 ,  H01L21/66 ,  C23C16/26 ,  C23C16/04 ,  H01L21/311

CPC classification number: H01L21/02274 ,  C23C16/04 ,  C23C16/26 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/45508 ,  C23C16/45565 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/02115 ,  H01L21/0337 ,  H01L21/31144 ,  H01L22/12

Abstract: Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.

公开(公告)号：US20180096843A1

公开(公告)日：2018-04-05

申请号：US15816520

申请日：2017-11-17

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar Kulshreshtha ,  Sudha Rathi ,  Praket P. Jha ,  Saptarshi Basu ,  Kwangduk Douglas Lee ,  Martin J. Seamons ,  Bok Hoen Kim ,  Ganesh Balasubramanian ,  Ziqing Duan ,  Lei Jing ,  Mandar B. Pandit

IPC: H01L21/02 ,  C23C16/04 ,  H01L21/311 ,  H01L21/66 ,  C23C16/26 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/033

CPC classification number: H01L21/02274 ,  C23C16/04 ,  C23C16/26 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/45508 ,  C23C16/45565 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/02115 ,  H01L21/0337 ,  H01L21/31144 ,  H01L22/12

Abstract: Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.