公开(公告)号：US09230796B2

公开(公告)日：2016-01-05

申请号：US14638877

申请日：2015-03-04

Applicant: Applied Materials, Inc.

Inventor： Gaku Furuta ,  Soo Young Choi ,  Beom Soo Park ,  Young-jin Choi ,  Omori Kenji

IPC: H01L21/311 ,  H01L21/02 ,  C23C16/34 ,  C23C16/44

CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/4404 ,  H01L21/02274 ,  H01L21/02299

Abstract: Embodiments of the present invention provide methods for depositing a nitrogen-containing material on large-sized substrates disposed in a processing chamber. In one embodiment, a method includes processing a batch of substrates within a processing chamber to deposit a nitrogen-containing material on a substrate from the batch of substrates, and performing a seasoning process at predetermined intervals during processing the batch of substrates to deposit a conductive seasoning layer over a surface of a chamber component disposed in the processing chamber. The chamber component may include a gas distribution plate fabricated from a bare aluminum without anodizing. In one example, the conductive seasoning layer may include amorphous silicon, doped amorphous silicon, doped silicon, doped polysilicon, doped silicon carbide, or the like.

Abstract translation: 本发明的实施方案提供了在设置在处理室中的大尺寸基板上沉积含氮材料的方法。 在一个实施方案中，一种方法包括处理处理室内的一批衬底，以将一批含有底物的含氮材料从该批衬底上沉积，并在处理该批衬底期间以预定间隔进行调味过程以沉积导电 在处理室中设置的腔室部件的表面上的调味层。 腔室部件可以包括由裸铝制成而不阳极氧化的气体分配板。 在一个示例中，导电调味层可以包括非晶硅，掺杂非晶硅，掺杂硅，掺杂多晶硅，掺杂碳化硅等。