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    Corner spoiler for improving profile uniformity
    1.
    发明授权
    Corner spoiler for improving profile uniformity 有权

    公开(公告)号：US10697063B2

    公开(公告)日：2020-06-30

    申请号：US14610489

    申请日：2015-01-30

    Applicant: Applied Materials, Inc.

    Inventor： Lai Zhao ,  Gaku Furuta ,  Qunhua Wang ,  Robin L. Tiner ,  Beom Soo Park ,  Soo Young Choi ,  Sanjay D. Yadav

    IPC: C23C16/00 ,  C23C16/455 ,  H01J37/32 ,  C23C16/458

    Abstract: The present disclosure relates to a corner spoiler designed to decrease high deposition rates on corner regions of substrates by changing the gas flow. In one embodiment, a corner spoiler for a processing chamber includes an L-shaped body fabricated from a dielectric material, wherein the L-shaped body is configured to change plasma distribution at a corner of a substrate in the processing chamber. The L-shaped body includes a first and second leg, wherein the first and second legs meet at an inside corner of the L-shaped body. The length of the first or second leg is twice the distance defined between the first or second leg and the inside corner. In another embodiment, a shadow frame for a depositing chamber includes a rectangular shaped body having a rectangular opening therethrough, and one or more corner spoilers coupled to the rectangular shaped body at corners of the rectangular shaped body.

    Silicon nitride forming precursor control
    2.
    发明申请
    Silicon nitride forming precursor control 审中-公开

    公开(公告)号：US20200058497A1

    公开(公告)日：2020-02-20

    申请号：US15999206

    申请日：2018-08-20

    Applicant: Applied Materials, Inc

    Inventor： Tae Kyung Won ,  Soo Young Choi ,  Jinhyun Cho ,  Yi Cui ,  Gaku Furuta

    IPC: H01L21/02

    Abstract: Embodiments described herein relate to methods of controlling the uniformity of SiN films deposited over large substrates. When the precursor gas or gas mixture in the chamber is energized by applying radio frequency (RF) power to the chamber, the RF current flowing through the plasma generates a standing wave effect (SWE) in an inter-electrode gap. SWEs become significant as substrate or electrode size approaches the RF wavelength. Process parameters, such as process power, process pressure, electrode spacing, and gas flow ratios all affect the SWE. These parameters can be altered in order to minimize the SWE problem and to achieve acceptable thickness and properties uniformities. In some embodiments, methods of depositing a dielectric film over a large substrate at various process power ranges, at various process pressure ranges, at various gas flow rates, while achieving various plasma densities will act to reduce the SWE, creating greater plasma stability.

    A-Si seasoning effect to improve SiN run-to-run uniformity
    4.
    发明授权
    A-Si seasoning effect to improve SiN run-to-run uniformity 有权
    A-Si调味效果提高了SiN运行均匀性

    公开(公告)号：US09230796B2

    公开(公告)日：2016-01-05

    申请号：US14638877

    申请日：2015-03-04

    Applicant: Applied Materials, Inc.

    Inventor： Gaku Furuta ,  Soo Young Choi ,  Beom Soo Park ,  Young-jin Choi ,  Omori Kenji

    IPC: H01L21/311 ,  H01L21/02 ,  C23C16/34 ,  C23C16/44

    CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/4404 ,  H01L21/02274 ,  H01L21/02299

    Abstract: Embodiments of the present invention provide methods for depositing a nitrogen-containing material on large-sized substrates disposed in a processing chamber. In one embodiment, a method includes processing a batch of substrates within a processing chamber to deposit a nitrogen-containing material on a substrate from the batch of substrates, and performing a seasoning process at predetermined intervals during processing the batch of substrates to deposit a conductive seasoning layer over a surface of a chamber component disposed in the processing chamber. The chamber component may include a gas distribution plate fabricated from a bare aluminum without anodizing. In one example, the conductive seasoning layer may include amorphous silicon, doped amorphous silicon, doped silicon, doped polysilicon, doped silicon carbide, or the like.

    Abstract translation: 本发明的实施方案提供了在设置在处理室中的大尺寸基板上沉积含氮材料的方法。 在一个实施方案中，一种方法包括处理处理室内的一批衬底，以将一批含有底物的含氮材料从该批衬底上沉积，并在处理该批衬底期间以预定间隔进行调味过程以沉积导电 在处理室中设置的腔室部件的表面上的调味层。 腔室部件可以包括由裸铝制成而不阳极氧化的气体分配板。 在一个示例中，导电调味层可以包括非晶硅，掺杂非晶硅，掺杂硅，掺杂多晶硅，掺杂碳化硅等。

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