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公开(公告)号：US20240249904A1
公开(公告)日：2024-07-25
申请号：US18099353
申请日：2023-01-20
发明人： Mateo Navarro Goldaraz , Graham Wright , Ori Noked
CPC分类号： H01J27/022 , H01J27/26
摘要： An ion source for generating an ion beam containing aluminum ions is disclosed. The ion source includes a first gas source to introduce an organoaluminium compound into the arc chamber of the ion source. A second gas, different from the first gas, which is a chlorine-containing gas is also introduced to the arc chamber. The chloride co-flow reduces the buildup of decomposition material that occurs within the arc chamber. This buildup may occur at the gas bushing, the extraction aperture or near the repeller. In some embodiments, the second gas is introduced continuously. In other embodiments, the second gas is periodically introduced, based on hours of operation or the measured uniformity of the extracted ion beam. The second gas may be introduced from second gas source or from a vaporizer.
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公开(公告)号：US11996281B1
公开(公告)日：2024-05-28
申请号：US18206910
申请日：2023-06-07
发明人： Graham Wright , Ori Noked , Craig R. Chaney , Adam M. McLaughlin
摘要： An ion source that may be used to introduce a dopant material into the arc chamber is disclosed. A component containing the dopant material is disposed in the path of an etching gas, which also enters the arc chamber. In some embodiments, the dopant material is in liquid form, and the etching gas travels through the liquid. In other embodiments, the dopant material is a solid material. In some embodiments, the solid material is formed as a porous structure, such that the etching gas flows through the solid material. In other embodiments, one or more components of the ion source are manufactured using a material that includes the dopant material, such that the etching gas etches the component to release the dopant material.
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