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    System and method for introducing aluminum to an ion source
    1.
    发明授权
    System and method for introducing aluminum to an ion source 有权

    公开(公告)号：US11996281B1

    公开(公告)日：2024-05-28

    申请号：US18206910

    申请日：2023-06-07

    申请人： Applied Materials, Inc.

    发明人： Graham Wright ,  Ori Noked ,  Craig R. Chaney ,  Adam M. McLaughlin

    IPC分类号： H01J7/02 ,  H01J1/20 ,  H01J7/24

    CPC分类号： H01J7/02 ,  H01J1/20 ,  H01J7/24

    摘要： An ion source that may be used to introduce a dopant material into the arc chamber is disclosed. A component containing the dopant material is disposed in the path of an etching gas, which also enters the arc chamber. In some embodiments, the dopant material is in liquid form, and the etching gas travels through the liquid. In other embodiments, the dopant material is a solid material. In some embodiments, the solid material is formed as a porous structure, such that the etching gas flows through the solid material. In other embodiments, one or more components of the ion source are manufactured using a material that includes the dopant material, such that the etching gas etches the component to release the dopant material.

    Thermally isolated repeller and electrodes
    4.
    发明授权
    Thermally isolated repeller and electrodes 有权

    公开(公告)号：US11239040B2

    公开(公告)日：2022-02-01

    申请号：US17078262

    申请日：2020-10-23

    申请人： Applied Materials, Inc.

    发明人： Adam M. McLaughlin ,  Craig R. Chaney ,  Jordan B. Tye

    IPC分类号： H01J27/02

    摘要： An ion source having a thermally isolated repeller is disclosed. The repeller comprises a repeller disk and a plurality of spokes originating at the back surface of the repeller disk and terminating in a post. In certain embodiments, the post may be hollow through at least a portion of its length. The use of spokes rather than a central stem may reduce the thermal conduction from the repeller disk to the post. By incorporating a hollow post, the thermal conduction is further reduced. This configuration may increase the temperature of the repeller disk by more than 100° C. In certain embodiments, radiation shields are provided on the back surface of the repeller disk to reduce the amount of radiation emitted from the sides of the repeller disk. This may also help increase the temperature of the repeller. A similar design may be utilized for other electrodes in the ion source.

    MOLTEN LIQUID TRANSPORT FOR TUNABLE VAPORIZATION IN ION SOURCES
    5.
    发明公开
    MOLTEN LIQUID TRANSPORT FOR TUNABLE VAPORIZATION IN ION SOURCES 审中-公开

    公开(公告)号：US20230402247A1

    公开(公告)日：2023-12-14

    申请号：US17835107

    申请日：2022-06-08

    申请人： Applied Materials, Inc.

    发明人： Craig R. Chaney ,  Graham Wright

    IPC分类号： H01J37/08 ,  H01J27/08 ,  H01J37/34

    CPC分类号： H01J37/08 ,  H01J27/08 ,  H01J37/3435

    摘要： An ion source with a crucible is disclosed. In some embodiments, the crucible contains a solid dopant material, such as a metal. A porous wicking tip is disposed in the crucible in contact with the solid dopant material. The porous wicking tip may be a tube with one or more interior conduits. Alternatively, the porous tip may be two concentric cylinders with a plurality of rods disposed in the annular ring between the two cylinders. Alternatively, the porous tip may be one or more foil layers wound together. In each of these embodiments, the wicking tip can be used to control the flow rate of molten dopant material to the arc chamber.

    HELICAL VOLTAGE STANDOFF
    8.
    发明公开
    HELICAL VOLTAGE STANDOFF 审中-公开

    公开(公告)号：US20240112883A1

    公开(公告)日：2024-04-04

    申请号：US17957095

    申请日：2022-09-30

    申请人： Applied Materials, Inc.

    发明人： Diana C. Gronski ,  Alicia Chen ,  Craig R. Chaney ,  Adam M. McLaughlin

    IPC分类号： H01J37/317 ,  H01L21/265

    CPC分类号： H01J37/3171 ,  H01L21/26513 ,  H01J2237/31701

    摘要： An insulator that has a helical protrusion spiraling around the shaft is disclosed. A lip is disposed on the distal end of the helical protrusion, creating regions on the shaft that are shielded from material deposition by the lip. By proper sizing of the threads, the helical protrusion and the lip, the line-of-sight to the interior wall of the shaft can be greatly reduced. This results in longer times before failure. This insulator may be used in an ion implantation system to physically and electrically separate two components.

    Lattice Based Voltage Standoff
    10.
    发明公开
    Lattice Based Voltage Standoff 审中-公开

    公开(公告)号：US20240177960A1

    公开(公告)日：2024-05-30

    申请号：US18070640

    申请日：2022-11-29

    申请人： Applied Materials, Inc.

    发明人： Adam M. McLaughlin ,  Craig R. Chaney

    IPC分类号： H01J37/147 ,  H01J37/317

    CPC分类号： H01J37/147 ,  H01J37/3171 ,  H01J2237/032 ,  H01J2237/038

    摘要： An insulator that has a lattice is disclosed. The insulator may have a shaft with two ends. The lattice may be disposed on the outer surface of the shaft. In some embodiments, one or more sheaths are used to cover portions of the shaft. A lattice may also be disposed on the inner wall and/or outer walls of the sheaths. The lattice serves to increase the tracking length between the two ends of the shaft. This results in longer times before failure. This insulator may be used in an ion implantation system to physically and electrically separate two components.