公开(公告)号：US20230402262A1

公开(公告)日：2023-12-14

申请号：US17869987

申请日：2022-07-21

Applicant: Applied Materials, Inc.

Inventor： Tae Seung CHO ,  David Michael BENJAMINSON ,  Kenneth SCHATZ ,  Ryan Michael PAKULSKI ,  Martin Yue CHOY ,  Pratheep GUNASEELAN ,  Chih-Yung HUANG

IPC: H01J37/32

CPC classification number: H01J37/32596 ,  H01J37/32357 ,  H01J37/3244

Abstract: A remote plasma source (RPS) for generating etchants leverages symmetrical hallow cathode cavities to increase etchant rates. The RPS includes an upper electrode with a first hollow cavity configured to induce a hollow cathode effect within the first hollow cavity, a lower electrode with a second hollow cavity configured to induce a hollow cathode effect within the second hollow cavity, wherein the first hollow cavity and the second hollow cavity are symmetrical, a first gap positioned between and electrically separating the upper electrode and the lower electrode, and an annular dielectric cover in direct contact with the lower electrode in the first gap and forms a second gap between an uppermost surface of the annular dielectric cover and a lowermost surface of the upper electrode. The annular dielectric cover fills approximately 50% to approximately 95% of a height of the first gap.