APPARATUS FOR GENERATING ETCHANTS FOR REMOTE PLASMA PROCESSES

    公开(公告)号:US20230402262A1

    公开(公告)日:2023-12-14

    申请号:US17869987

    申请日:2022-07-21

    CPC classification number: H01J37/32596 H01J37/32357 H01J37/3244

    Abstract: A remote plasma source (RPS) for generating etchants leverages symmetrical hallow cathode cavities to increase etchant rates. The RPS includes an upper electrode with a first hollow cavity configured to induce a hollow cathode effect within the first hollow cavity, a lower electrode with a second hollow cavity configured to induce a hollow cathode effect within the second hollow cavity, wherein the first hollow cavity and the second hollow cavity are symmetrical, a first gap positioned between and electrically separating the upper electrode and the lower electrode, and an annular dielectric cover in direct contact with the lower electrode in the first gap and forms a second gap between an uppermost surface of the annular dielectric cover and a lowermost surface of the upper electrode. The annular dielectric cover fills approximately 50% to approximately 95% of a height of the first gap.

    METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE

    公开(公告)号:US20210398778A1

    公开(公告)日:2021-12-23

    申请号:US16906875

    申请日:2020-06-19

    Abstract: Methods and apparatus for processing a substrate are herein described. For example, a processing chamber for processing a substrate includes a chamber body defining a processing volume; a radio frequency (RF) power source configured to deliver RF energy to the processing volume for processing a substrate; a substrate support comprising an electrode; an AC power supply configured to supply power to the processing chamber; an RF filter circuit connected between the electrode and the AC power supply; and a controller configured to monitor an RF voltage at the RF filter circuit that is indirectly induced into the electrode by the RF power source during operation, and to determine a processing state in the processing volume based on the monitored RF voltage

    PLASMA UNIFORMITY CONTROL BY ARRAYS OF UNIT CELL PLASMAS
    4.
    发明申请
    PLASMA UNIFORMITY CONTROL BY ARRAYS OF UNIT CELL PLASMAS 有权
    等离子体等离子体等离子体均匀控制

    公开(公告)号:US20160053376A1

    公开(公告)日:2016-02-25

    申请号:US14489398

    申请日:2014-09-17

    Abstract: The present invention provides an apparatus having a plasma profile control plate disposed in a plasma processing chamber so as to locally alter plasma density to provide uniform plasma distribution across a substrate surface during processing. In one embodiment, a process kit includes a plate configured to be disposed in a plasma processing chamber, a plurality of apertures formed therethrough, the apertures configured to permit processing gases to flow through the plate, and an array of unit cells including at least one aperture formed in the plate, wherein each unit cell has an electrode assembly individually controllable relative to electrode assemblies disposed in at least two other unit cells.

    Abstract translation: 本发明提供了一种装置,其具有设置在等离子体处理室中的等离子体轮廓控制板,从而局部地改变等离子体密度,以在处理期间在衬底表面上提供均匀的等离子体分布。 在一个实施例中,处理套件包括被配置为设置在等离子体处理室中的板,通过其形成的多个孔,所述孔被构造成允许处理气体流过板,以及包括至少一个 孔,其中每个单元电池具有相对于设置在至少两个其它单元电池中的电极组件可独立控制的电极组件。

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