公开(公告)号：US20220059359A1

公开(公告)日：2022-02-24

申请号：US17367038

申请日：2021-07-02

Applicant: Applied Materials, Inc.

Inventor： Zhi Gang WANG ,  Jiao YANG ,  Alfredo GRANADOS ,  Jon C. FARR ,  Heng WANG ,  Rui Zhe REN

IPC: H01L21/3065 ,  C23C16/52

Abstract: A method of cyclic etching, comprising: (A) depositing, prior to cyclically etching a substrate through a mask opening, a pre-etch protection layer conformally over the mask, sidewalls of the mask defining the mask opening; and an exposed portion of the substrate exposed through the mask opening, the pre-etch protection layer deposited to a first thickness; and (B) cyclically etching the substrate by: (i) depositing a protection layer in the opening of the mask, the protection layer deposited to a second thickness that is less than half of the first thickness; (ii) etching through a portion of the protection layer disposed on the substrate and etching the substrate; and (iii) repeating (i) and (ii) until an end point is reached.