公开(公告)号：US20220399205A1

公开(公告)日：2022-12-15

申请号：US17770019

申请日：2019-12-23

Applicant: Applied Materials, Inc.

Inventor： Zhigang WANG ,  Jiao YANG ,  Heng WANG ,  Alfredo GRANADOS ,  Jon C. FARR ,  Ruizhe REN

IPC: H01L21/311 ,  H01L21/3213 ,  H01L21/02

Abstract: An apparatus and method for etching a material layer with a cyclic etching and deposition process. The method for etching a material layer on a substrate includes: (a) etching at least a portion of a material layer (302) on a substrate (101) in an etch chamber (100) to form an open feature (360) having a bottom surface (312) and sidewalls in the material layer (302); (b) forming a protection layer (314) on the sidewalls and the bottom surface (312) of the open feature (360) from a protection layer (314) gas mixture comprising at least one carbon-fluorine containing gas; (c) selectively removing the protection layer (314) formed on the bottom surface (312) of the open feature (360) from a bottom surface (312) open gas mixture comprising the carbon-fluorine containing gas; and (d) continuingly etching the material layer (302) from the bottom surface (312) of the open feature (360) until a desired depth of the open feature (360) is reached.

公开(公告)号：US20220059359A1

公开(公告)日：2022-02-24

申请号：US17367038

申请日：2021-07-02

Applicant: Applied Materials, Inc.

Inventor： Zhi Gang WANG ,  Jiao YANG ,  Alfredo GRANADOS ,  Jon C. FARR ,  Heng WANG ,  Rui Zhe REN

IPC: H01L21/3065 ,  C23C16/52

Abstract: A method of cyclic etching, comprising: (A) depositing, prior to cyclically etching a substrate through a mask opening, a pre-etch protection layer conformally over the mask, sidewalls of the mask defining the mask opening; and an exposed portion of the substrate exposed through the mask opening, the pre-etch protection layer deposited to a first thickness; and (B) cyclically etching the substrate by: (i) depositing a protection layer in the opening of the mask, the protection layer deposited to a second thickness that is less than half of the first thickness; (ii) etching through a portion of the protection layer disposed on the substrate and etching the substrate; and (iii) repeating (i) and (ii) until an end point is reached.

公开(公告)号：US20220181160A1

公开(公告)日：2022-06-09

申请号：US17116335

申请日：2020-12-09

Applicant: APPLIED MATERIALS, INC.

Inventor： Shiva RAI ,  Alfredo GRANADOS

IPC: H01L21/306 ,  H01L31/0216 ,  H01L31/0352 ,  H01L31/0304 ,  H01L31/18 ,  H01L33/00 ,  H01L33/06 ,  H01L33/30 ,  H01L33/32 ,  H01L33/24 ,  H01L33/44 ,  H01L21/67 ,  H01J37/32

Abstract: Methods and apparatus for processing a photonic device are provided herein. For example, methods include etching, using a plasma etch process that uses a first gas, a first epitaxial layer of material of the photonic device comprising a base layer comprising at least one of silicon, germanium, sapphire, aluminum indium gallium arsenide (AlxInyGa1-x-yAs), aluminum indium gallium phosphide (AlxInyGa1-x-yP), aluminum indium gallium nitride (AlxInyGa1-x-yN), aluminum indium gallium arsenide phosphide (AlxInyGa1-x-yAszP1-z), depositing, using a plasma deposition process that uses a second gas different from the first gas, a first dielectric layer over etched sidewalls of the first epitaxial layer of material, etching, using the first gas, a second epitaxial layer of material of the photonic device, and depositing, using the second gas, a second dielectric layer over etched sidewalls of the second epitaxial layer of material.

公开(公告)号：US20140273520A1

公开(公告)日：2014-09-18

申请号：US14182970

申请日：2014-02-18

Applicant: Applied Materials, Inc.

Inventor： Robert CHEBI ,  Alfredo GRANADOS ,  Zhao H. CENG ,  Jianqi WANG ,  Rajan BALESAN

IPC: H01L21/67 ,  H01L21/02

CPC classification number: H01L21/02118 ,  H01J37/321 ,  H01J37/32119 ,  H01J37/32522 ,  H01L21/67109

Abstract: Embodiments described herein generally relate to an apparatus and methods for reducing the deposition of polymers in a semiconductor processing chamber. A heater jacket and heat sources are provided and may be configured to maintain a uniform temperature profile of the processing chamber. A method of maintaining a uniform temperature profile of a dielectric ceiling of the processing chamber is also provided.

Abstract translation: 本文描述的实施例通常涉及用于减少聚合物在半导体处理室中的沉积的装置和方法。 提供加热器护套和热源，并且可以构造为保持处理室的均匀的温度分布。 还提供了一种维持处理室的电介质天花板的均匀温度分布的方法。