公开(公告)号：US20170200585A1

公开(公告)日：2017-07-13

申请号：US15104461

申请日：2015-06-15

Applicant: Applied Materials, Inc.

Inventor： Rongping WANG ,  Ruizhe REN ,  Jon C. FARR ,  Chethan MANGALORE ,  Peter DEMONTE ,  Parthiban BALAKRISHNA

IPC: H01J37/32 ,  H01F27/28

CPC classification number: H01J37/3211 ,  H01F27/28 ,  H01J37/321 ,  H01J37/32651 ,  H01J2237/3341 ,  H01J2237/3344

Abstract: Embodiments of the present disclosure include a radial frequency plasma source having a split type inner coil assembly. In one embodiment, the split type inner coil assembly comprises two intertwining coils. In another embodiment, the split type inner coil assembly includes looped coils forming a dome.

公开(公告)号：US20220399205A1

公开(公告)日：2022-12-15

申请号：US17770019

申请日：2019-12-23

Applicant: Applied Materials, Inc.

Inventor： Zhigang WANG ,  Jiao YANG ,  Heng WANG ,  Alfredo GRANADOS ,  Jon C. FARR ,  Ruizhe REN

IPC: H01L21/311 ,  H01L21/3213 ,  H01L21/02

Abstract: An apparatus and method for etching a material layer with a cyclic etching and deposition process. The method for etching a material layer on a substrate includes: (a) etching at least a portion of a material layer (302) on a substrate (101) in an etch chamber (100) to form an open feature (360) having a bottom surface (312) and sidewalls in the material layer (302); (b) forming a protection layer (314) on the sidewalls and the bottom surface (312) of the open feature (360) from a protection layer (314) gas mixture comprising at least one carbon-fluorine containing gas; (c) selectively removing the protection layer (314) formed on the bottom surface (312) of the open feature (360) from a bottom surface (312) open gas mixture comprising the carbon-fluorine containing gas; and (d) continuingly etching the material layer (302) from the bottom surface (312) of the open feature (360) until a desired depth of the open feature (360) is reached.

公开(公告)号：US20220059359A1

公开(公告)日：2022-02-24

申请号：US17367038

申请日：2021-07-02

Applicant: Applied Materials, Inc.

Inventor： Zhi Gang WANG ,  Jiao YANG ,  Alfredo GRANADOS ,  Jon C. FARR ,  Heng WANG ,  Rui Zhe REN

IPC: H01L21/3065 ,  C23C16/52

Abstract: A method of cyclic etching, comprising: (A) depositing, prior to cyclically etching a substrate through a mask opening, a pre-etch protection layer conformally over the mask, sidewalls of the mask defining the mask opening; and an exposed portion of the substrate exposed through the mask opening, the pre-etch protection layer deposited to a first thickness; and (B) cyclically etching the substrate by: (i) depositing a protection layer in the opening of the mask, the protection layer deposited to a second thickness that is less than half of the first thickness; (ii) etching through a portion of the protection layer disposed on the substrate and etching the substrate; and (iii) repeating (i) and (ii) until an end point is reached.

公开(公告)号：US20140256148A1

公开(公告)日：2014-09-11

申请号：US14284088

申请日：2014-05-21

Applicant: Applied Materials, Inc.

Inventor： Roy C. NANGOY ,  Saravjeet SINGH ,  Jon C. FARR ,  Sharma V. PAMARTHY ,  Ajay KUMAR

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  C23C16/45508 ,  C23C16/45563 ,  C23C16/45574 ,  C23C16/45587 ,  C23C16/45591 ,  C23C16/505 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/3222 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32458 ,  H01L21/30655 ,  H01L21/67069

Abstract: Embodiments of the present disclosure relate to method and apparatus for providing processing gases to a process chamber with improved plasma dissociation efficiency. One embodiment of the present disclosure provides a baffle nozzle assembly comprising an outer body defining an extension volume connected to a processing chamber. A processing gas is flown to the processing chamber through the extension volume which is exposed to power source for plasma generation.

Abstract translation: 本公开的实施例涉及用于向具有改进的等离子体解离效率的处理室提供处理气体的方法和装置。 本公开的一个实施例提供了一种挡板喷嘴组件，其包括限定连接到处理室的延伸体的外部主体。 处理气体通过暴露于等离子体产生的电源的延伸体积流到处理室。