公开(公告)号：US20210028282A1

公开(公告)日：2021-01-28

申请号：US16519246

申请日：2019-07-23

Applicant: Applied Materials, Inc.

Inventor： Arvind KUMAR ,  Sanjeev MANHAS ,  Mahendra PAKALA ,  Ellie Y. YIEH

IPC: H01L29/10 ,  H01L29/78 ,  H01L29/04 ,  H01L21/8234

Abstract: The present disclosure provides methods for forming a channel structure in a film stack for manufacturing three dimensional (3D) stacked memory cell semiconductor devices. In one embodiment, a memory cell device includes a film stack comprising alternating pairs of dielectric layers and conductive structures horizontally formed on a substrate, and a channel structure formed in the film stack, wherein the channel structure is filled with a channel layer and a protective blocking layer, wherein the channel layer has a gradient dopant concentration along a vertical stacking of the film stack.

公开(公告)号：US20200144272A1

公开(公告)日：2020-05-07

申请号：US16243551

申请日：2019-01-09

Applicant: Applied Materials, Inc.

Inventor： Arvind KUMAR ,  Mahendra PAKALA ,  Sanjeev MANHAS ,  Satendra Kumar GAUTAM

IPC: H01L27/108 ,  H01L29/49 ,  H01L21/28

Abstract: Embodiments of the present disclosure generally relate to a storage device. More specifically, embodiments described herein generally relate to a dynamic random-access memory and the method of making thereof. In one embodiment, a cell array includes at least an active region and a field region adjacent to the active region. The active region includes at least one trench, a dielectric layer disposed in the trench, a first conformal layer disposed on the dielectric layer, and a conductive material disposed on the first conformal layer. The field region includes a trench, a dielectric layer disposed in the trench, a second conformal layer disposed on the dielectric layer, and a conductive material disposed on the second conformal layer. The second conformal layer has a different composition than the first conformal layer.

公开(公告)号：US20200350318A1

公开(公告)日：2020-11-05

申请号：US16931154

申请日：2020-07-16

Applicant: Applied Materials, Inc.

Inventor： Arvind KUMAR ,  Mahendra PAKALA ,  Sanjeev MANHAS ,  Satendra Kumar GAUTAM

IPC: H01L27/108 ,  H01L21/28 ,  H01L29/49

Abstract: Embodiments of the present disclosure generally relate to a storage device. More specifically, embodiments described herein generally relate to a dynamic random-access memory and the method of making thereof. In one embodiment, a cell array includes at least an active region and a field region adjacent to the active region. The active region includes at least one trench, a dielectric layer disposed in the trench, a first conformal layer disposed on the dielectric layer, and a conductive material disposed on the first conformal layer. The field region includes a trench, a dielectric layer disposed in the trench, a second conformal layer disposed on the dielectric layer, and a conductive material disposed on the second conformal layer. The second conformal layer has a different composition than the first conformal layer.