公开(公告)号：US20220301867A1

公开(公告)日：2022-09-22

申请号：US17208719

申请日：2021-03-22

Applicant: Applied Materials, Inc.

Inventor： Jethro TANNOS ,  Bhargav Sridhar CITLA ,  Srinivas D. NEMANI ,  Ellie YIEH ,  Joshua Alan RUBNITZ ,  Erica CHEN ,  Soham Sunjay ASRANI ,  Nikolaos BEKIARIS ,  Douglas Arthur BUCHBERGER, JR.

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/505 ,  C23C16/52 ,  C23C16/40 ,  C23C16/56 ,  C23C16/458

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method includes supplying a vaporized precursor into a processing volume, supplying activated elements including ions and radicals from a remote plasma source, energizing the activated elements using RF source power at a first duty cycle to react with the vaporized precursor to deposit an SiNHx film onto a substrate disposed in the processing volume, supplying a first process gas from the remote plasma source while providing RF bias power at a second duty cycle different from the first duty cycle to the substrate support to convert the SiNHx film to an SiOx film, supplying a process gas mixture formed from a second process gas supplied from the remote plasma source and a third process gas supplied from the gas supply while providing RF bias power at the second duty cycle to the substrate support, and annealing the substrate.

公开(公告)号：US20220298636A1

公开(公告)日：2022-09-22

申请号：US17208735

申请日：2021-03-22

Applicant: Applied Materials, Inc.

Inventor： Soham Sunjay ASRANI ,  Joshua Alan RUBNITZ ,  Bhargav Sridhar CITLA ,  Srinivas D. NEMANI ,  Erica CHEN ,  Nikolaos BEKIARIS ,  Douglas Arthur BUCHBERGER, JR. ,  Jethro TANNOS ,  Ellie YIEH

IPC: C23C16/455 ,  C23C16/515 ,  C23C16/505 ,  C23C16/52 ,  C23C16/458

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises supplying a vaporized silicon containing precursor from a gas supply into a processing volume of a processing chamber, supplying a first process gas from the gas supply into the processing volume, energizing the first process gas using RF source power at a first duty cycle to react with the vaporized silicon containing precursor, and supplying a process gas mixture from the gas supply while providing RF bias power at a second duty cycle different from the first duty cycle to a substrate support disposed in the processing volume to deposit a SiHx film onto a substrate supported on the substrate support.