公开(公告)号：US20240329322A1

公开(公告)日：2024-10-03

申请号：US18625979

申请日：2024-04-03

Applicant: Applied Materials, Inc.

Inventor： Jinyu LU ,  Ludovic Godet ,  Jinxin FU ,  Kenichi OHNO ,  Shangyi Chen ,  Takashi KURATOMI ,  Erica CHEN ,  Rami HURARNI ,  Yangyang SUN

IPC: G02B6/34 ,  C23C16/40 ,  C23C16/455

CPC classification number: G02B6/34 ,  C23C16/403 ,  C23C16/45553

Abstract: Embodiments described herein relate to improved waveguides with materials layers improving the optical properties of one or more surface regions of waveguides and methods of forming the same. In one embodiment, a waveguide is provided. The waveguide including a substrate, a grating disposed in or on the substrate, the grating comprising a plurality of structures defined by a plurality of trenches, a layer of silicon oxide or aluminum oxide disposed over the structures on the substrate. The layer is disposed over sidewalls and top surfaces of the structures, and a bottom surface of the trenches. The waveguide further includes a high index layer disposed over the layer. The high index layer is disposed over the sidewalls and the top surfaces of the structures, and the bottom surface of the trenches with the layer disposed in between the structures and the high index layer.

公开(公告)号：US20160141202A1

公开(公告)日：2016-05-19

申请号：US14597149

申请日：2015-01-14

Applicant: Applied Materials, Inc.

Inventor： Jun XUE ,  Ludovic GODET ,  Erica CHEN ,  Srinivas D. NEMANI ,  Ellie Y. YIEH

IPC: H01L21/768 ,  H01L21/3115 ,  H01L21/311 ,  H01L21/223

CPC classification number: H01L21/7682 ,  H01J37/32357 ,  H01J37/32366 ,  H01J37/32412 ,  H01J37/32422 ,  H01L21/2236 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31155 ,  H01L21/768 ,  H01L21/76825 ,  H01L23/5222

Abstract: Methods for forming air gaps in an interconnection structure with desired materials formed on different locations of the interconnection structure using an ion implantation process to define an etching boundary followed by an etching process for semiconductor devices are provided. In one embodiment, a method for forming air gaps in an interconnection structure on a substrate, the method includes implanting ions in a first region of an insulating material disposed on a substrate, leaving a second region without implanted ions, the second region having a first surface interfaced with the first region and a second surface interfaced with the substrate, and performing an etching process to selectively etch the second region away from the substrate, forming an air gap between the first region and the substrate.

Abstract translation: 提供了使用离子注入工艺形成在互连结构的不同位置上形成的所需材料的互连结构中的空气间隙以限定蚀刻边界，然后进行半导体器件的蚀刻工艺的方法。 在一个实施例中，一种用于在衬底上形成互连结构中的气隙的方法，所述方法包括将离子注入设置在衬底上的绝缘材料的第一区域中，留下没有注入离子的第二区域，第二区域具有第一 与第一区域接合的表面和与衬底接合的第二表面，以及执行蚀刻工艺以选择性地蚀刻第二区域远离衬底，在第一区域和衬底之间形成气隙。

公开(公告)号：US20220299677A1

公开(公告)日：2022-09-22

申请号：US17654860

申请日：2022-03-15

Applicant: Applied Materials, Inc.

Inventor： Erica CHEN ,  Kang Luo ,  Hao Tang ,  Jinrui Guo ,  Ludovic Godet

IPC: G02B1/00 ,  G02B1/11 ,  G02B5/18

Abstract: Embodiments of the present disclosure generally relate to encapsulated optical devices and methods of forming encapsulated optical devices. The optical devices include a plurality of optical device structures disposed on a substrate. An encapsulation coating is disposed over the plurality of optical device structures. The encapsulation coating includes a ratio of encapsulation material to solvent. A plurality of gaps are formed in the optical device. The plurality of gaps are formed when the solvent is evaporated from the encapsulation coating. The material composition of the encapsulation coating, the width and device angle of the plurality of optical device structures, as well as process parameters of the spin on coating process, the curing process, the baking process, the drying process, and the developing process will affect the formation of the plurality of gaps and the depth at which the plurality of gaps are formed.

公开(公告)号：US20160163546A1

公开(公告)日：2016-06-09

申请号：US14613545

申请日：2015-02-04

Applicant: Applied Materials, Inc.

Inventor： Ludovic GODET ,  Srinivas D. NEMANI ,  Erica CHEN ,  Jun XUE ,  Ellie Y. YIEH ,  Gary E. DICKERSON

IPC: H01L21/033 ,  H01L21/762 ,  H01L23/00 ,  H01L21/84

CPC classification number: H01L21/0337 ,  H01J2237/24528 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31155 ,  H01L21/32 ,  H01L21/76205 ,  H01L21/7624 ,  H01L21/823431 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/10879 ,  H01L27/1211 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/7831

Abstract: Embodiments of the present disclosure relate to precision material modification of three dimensional (3D) features or advanced processing techniques. Directional ion implantation methods are utilized to selectively modify desired regions of a material layer to improve etch characteristics of the modified material. For example, a modified region of a material layer may exhibit improved etch selectivity relative to an unmodified region of the material layer. Methods described herein are useful for manufacturing 3D hardmasks which may be advantageously utilized in various integration schemes, such as fin isolation and gate-all-around, among others. Multiple directional ion implantation processes may also be utilized to form dopant gradient profiles within a modified layer to further influence etching processes.

Abstract translation: 本公开的实施例涉及三维（3D）特征或高级处理技术的精密材料修改。 方向离子注入方法用于选择性地修饰材料层的所需区域以改善改性材料的蚀刻特性。 例如，材料层的改性区域相对于材料层的未改性区域可以表现出改进的蚀刻选择性。 本文描述的方法可用于制造3D硬掩模，其可以有利地用于各种集成方案中，例如翅片隔离和门全部等。 多方向离子注入工艺也可用于在改性层内形成掺杂剂梯度分布，以进一步影响蚀刻工艺。

公开(公告)号：US20220301867A1

公开(公告)日：2022-09-22

申请号：US17208719

申请日：2021-03-22

Applicant: Applied Materials, Inc.

Inventor： Jethro TANNOS ,  Bhargav Sridhar CITLA ,  Srinivas D. NEMANI ,  Ellie YIEH ,  Joshua Alan RUBNITZ ,  Erica CHEN ,  Soham Sunjay ASRANI ,  Nikolaos BEKIARIS ,  Douglas Arthur BUCHBERGER, JR.

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/505 ,  C23C16/52 ,  C23C16/40 ,  C23C16/56 ,  C23C16/458

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method includes supplying a vaporized precursor into a processing volume, supplying activated elements including ions and radicals from a remote plasma source, energizing the activated elements using RF source power at a first duty cycle to react with the vaporized precursor to deposit an SiNHx film onto a substrate disposed in the processing volume, supplying a first process gas from the remote plasma source while providing RF bias power at a second duty cycle different from the first duty cycle to the substrate support to convert the SiNHx film to an SiOx film, supplying a process gas mixture formed from a second process gas supplied from the remote plasma source and a third process gas supplied from the gas supply while providing RF bias power at the second duty cycle to the substrate support, and annealing the substrate.

公开(公告)号：US20220298636A1

公开(公告)日：2022-09-22

申请号：US17208735

申请日：2021-03-22

Applicant: Applied Materials, Inc.

Inventor： Soham Sunjay ASRANI ,  Joshua Alan RUBNITZ ,  Bhargav Sridhar CITLA ,  Srinivas D. NEMANI ,  Erica CHEN ,  Nikolaos BEKIARIS ,  Douglas Arthur BUCHBERGER, JR. ,  Jethro TANNOS ,  Ellie YIEH

IPC: C23C16/455 ,  C23C16/515 ,  C23C16/505 ,  C23C16/52 ,  C23C16/458

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises supplying a vaporized silicon containing precursor from a gas supply into a processing volume of a processing chamber, supplying a first process gas from the gas supply into the processing volume, energizing the first process gas using RF source power at a first duty cycle to react with the vaporized silicon containing precursor, and supplying a process gas mixture from the gas supply while providing RF bias power at a second duty cycle different from the first duty cycle to a substrate support disposed in the processing volume to deposit a SiHx film onto a substrate supported on the substrate support.

公开(公告)号：US20210111067A1

公开(公告)日：2021-04-15

申请号：US16653601

申请日：2019-10-15

Applicant: Applied Materials, Inc.

Inventor： Hao JIANG ,  Nikolaos BEKIARIS ,  Erica CHEN ,  Mehul B. NAIK

IPC: H01L21/768 ,  H01L21/762 ,  H01L21/285 ,  H01L21/3213 ,  H01L21/30 ,  H01L21/324 ,  H01L21/02

Abstract: Methods for forming an interconnections structure on a substrate in a cluster processing system and thermal processing such interconnections structure are provided. In one embodiment, a method for a device structure for semiconductor devices includes forming a barrier layer in an opening formed in a material layer disposed on a substrate, forming an interface layer on the barrier layer, forming a gap filling layer on the interface layer, and performing an annealing process on the substrate, wherein the annealing process is performed at a pressure range greater than 5 bar.

公开(公告)号：US20230273355A1

公开(公告)日：2023-08-31

申请号：US18173365

申请日：2023-02-23

Applicant: Applied Materials, Inc.

Inventor： Yingdong LUO ,  Kangkang WANG ,  Wei-Sheng LEI ,  Xiaopei DENG ,  Erica CHEN ,  Kang LUO ,  Daihua ZHANG ,  Rami HOURANI ,  Ludovic GODET

IPC: G02B5/18 ,  G02B1/14 ,  B23K26/402 ,  B23K26/60

CPC classification number: G02B5/1847 ,  G02B1/14 ,  B23K26/402 ,  B23K26/60

Abstract: Methods of dicing optical devices from an optical device substrate are disclosed. The methods include disposing a protective coating only over the optical devices. The optical device substrate includes the optical devices disposed on the surface of the optical device substrate with areas therebetween. The areas of the optical device substrate are exposed by the protective coating. The protective coating includes a polymer, a solvent, and an additive. The methods further include curing the protective coating via a cure process so that the protective coating is water-soluble after the solvent is removed by the cure process, dicing the optical devices from the optical device substrate by projecting a laser beam to the areas between the optical devices, and exposing the protective coating to water to remove the protective coating from the optical devices that are diced.

公开(公告)号：US20220357656A1

公开(公告)日：2022-11-10

申请号：US17740116

申请日：2022-05-09

Applicant: Applied Materials, Inc.

Inventor： Hao TANG ,  Kang LUO ,  Erica CHEN ,  Yongan XU

IPC: G03F7/00 ,  G02B5/18

Abstract: A method of imprinting a pattern on a substrate is provided. The method includes forming a first pattern on a plurality of masters using a method other than imprinting, the first pattern including a plurality of patterned features of varying sizes; measuring the patterned features at a plurality of locations on each of the masters; selecting a first master of the plurality of masters based on the measurements of the patterned features on each of the masters; using the first master to form a second pattern on an imprint template; and imprinting the first pattern on a first device with the imprint template.

公开(公告)号：US20170154776A1

公开(公告)日：2017-06-01

申请号：US15432368

申请日：2017-02-14

Applicant: Applied Materials, Inc.

Inventor： Ludovic GODET ,  Srinivas D. NEMANI ,  Erica CHEN ,  Jun XUE ,  Ellie Y. YIEH ,  Gary E. DICKERSON

IPC: H01L21/033 ,  H01L21/3105

CPC classification number: H01L21/0337 ,  H01J2237/24528 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31155 ,  H01L21/32 ,  H01L21/76205 ,  H01L21/7624 ,  H01L21/823431 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/10879 ,  H01L27/1211 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/7831

Abstract: Embodiments of the present disclosure relate to precision material modification of three dimensional (3D) features or advanced processing techniques. Directional ion implantation methods are utilized to selectively modify desired regions of a material layer to improve etch characteristics of the modified material. For example, a modified region of a material layer may exhibit improved etch selectivity relative to an unmodified region of the material layer. Methods described herein are useful for manufacturing 3D hardmasks which may be advantageously utilized in various integration schemes, such as fin isolation and gate-all-around, among others. Multiple directional ion implantation processes may also be utilized to form dopant gradient profiles within a modified layer to further influence etching processes.