公开(公告)号：US20140199833A1

公开(公告)日：2014-07-17

申请号：US14148385

申请日：2014-01-06

Applicant: Applied Materials, Inc.

Inventor： Rohit MISHRA ,  Khalid Mohiuddin SIRAJUDDIN ,  Madhava Rao YALAMANCHILI ,  Sonal A. SRIVASTAVA

IPC: H01L21/768

CPC classification number: H01L21/76898 ,  H01L21/3065

Abstract: The present disclosure provides methods for via reveal etching process to form through-silicon vias (TSVs) in a substrate. In one embodiment, a method for performing a via reveal process to form through-silicon vias in a substrate includes providing a substrate having partial through-silicon vias formed from a first surface of the substrate into a processing chamber, wherein the partial through-silicon vias formed in the substrate are blind vias, supplying an etching gas mixture including at least a fluorine containing gas and a chlorine containing gas into the processing chamber, and preferentially removing a portion of the substrate from a second surface of the substrate to expose the through-silicon vias until a desired length of the through-silicon vias is exposed from the second surface of the substrate.

Abstract translation: 本公开提供了用于通孔显示蚀刻工艺以在衬底中形成穿硅通孔（TSV）的方法。 在一个实施例中，用于执行通孔显示处理以在衬底中形成穿硅通孔的方法包括提供具有从衬底的第一表面形成到处理室中的部分穿硅通孔的衬底，其中部分通过硅 在基板上形成的通孔是盲孔，向处理室供应包含至少含氟气体和含氯气体的蚀刻气体混合物，并优先从基板的第二表面去除基板的一部分，以暴露出通孔 硅通孔直到从硅衬底的第二表面露出所需长度的通硅通孔。