公开(公告)号：US20140273292A1

公开(公告)日：2014-09-18

申请号：US14205673

申请日：2014-03-12

Applicant: Applied Materials, Inc.

Inventor： NICOLAS POSSEME ,  OLIVIER JOUBERT ,  THIBAUT DAVID ,  THORSTEN LILL

IPC: H01L21/66 ,  H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L29/66575 ,  H01L29/66628 ,  H01L29/7834

Abstract: Embodiments of methods of forming silicon nitride spacers are provided herein. In some embodiments, a method of forming silicon nitride spacers atop a substrate includes: depositing a silicon nitride layer atop an exposed silicon containing layer and an at least partially formed gate stack disposed atop a substrate; modifying a portion of the silicon nitride layer by exposing the silicon nitride layer to a hydrogen or helium containing plasma that is substantially free of fluorine; and removing the modified portion of the silicon nitride layer by performing a wet cleaning process to form the silicon nitride spacers, wherein the wet cleaning process removes the modified portion of the silicon nitride layer selectively to the silicon containing layer.

Abstract translation: 本文提供了形成氮化硅间隔物的方法的实施例。 在一些实施例中，在衬底顶部形成氮化硅间隔物的方法包括：在暴露的含硅层和设置在衬底顶部的至少部分形成的栅极堆叠之上沉积氮化硅层; 通过将氮化硅层暴露于基本上不含氟的含氢或含氦的等离子体来修饰氮化硅层的一部分; 以及通过进行湿式清洗处理来形成所述氮化硅间隔物来去除所述氮化硅层的修饰部分，其中所述湿式清洁工艺选择性地将所述氮化硅层的修饰部分去除所述含硅层。