公开(公告)号：US20240160100A1

公开(公告)日：2024-05-16

申请号：US18222897

申请日：2023-07-17

Applicant: Applied Materials, Inc.

Inventor： Tzu Shun Yang ,  Zhenxing Han ,  Madhur Sachan ,  Lequn Liu ,  Nasrin Kazem ,  Lakmal Charidu Kalutarage ,  Mark Joseph Saly

IPC: G03F7/004 ,  G03F7/00 ,  G03F7/16 ,  G03F7/36 ,  H01L21/027

CPC classification number: G03F7/0042 ,  G03F7/167 ,  G03F7/36 ,  G03F7/70033 ,  H01L21/0274

Abstract: Embodiments disclosed herein may include a method for developing a photopatterned metal oxo photoresist. In an embodiment, the method may include pre-treating the photopatterned metal oxo photoresist with a pre-treatment process, developing the photopatterned metal oxo photoresist with a thermal dry develop process to selectively remove a portion of the photopatterned metal oxo photoresist and form a resist mask. In an embodiment, the thermal dry develop process includes a first sub-operation, and a second sub-operation that is different than the first sub-operation. In an embodiment, the process further includes post-treating the resist mask with a post-treatment process.