公开(公告)号：US10790188B2

公开(公告)日：2020-09-29

申请号：US16159115

申请日：2018-10-12

Applicant: Applied Materials, Inc.

Inventor： Nasrin Kazem ,  Jeffrey W. Anthis ,  David Thompson

IPC: C23C16/06 ,  H01L21/768 ,  C23C16/04 ,  C23C16/56 ,  H01L21/285

Abstract: Methods for filling a substrate feature with a seamless ruthenium gap fill are described. The methods include depositing a ruthenium film, oxidizing the ruthenium film to form an oxidized ruthenium film, reducing the oxidized ruthenium film to a reduced ruthenium film and repeating the oxidation and reduction processes to form a seamless ruthenium gap fill.

公开(公告)号：US20240247370A1

公开(公告)日：2024-07-25

申请号：US18099459

申请日：2023-01-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Jeffrey W. Anthis ,  Nasrin Kazem ,  Lakmal Charidu Kalutarage ,  Jayden Stephen John Shackerley Potter ,  Thomas Joseph Knisley ,  Lisa Enman

IPC: C23C16/40 ,  C23C16/455 ,  H01B1/08 ,  H01L21/285 ,  H01L33/42

CPC classification number: C23C16/40 ,  C23C16/45536 ,  C23C16/45553 ,  H01B1/08 ,  H01L21/28568 ,  H01L33/42 ,  H01L2933/0016

Abstract: A method includes depositing a coating including stoichiometric one-to-one ruthenium oxide (RuO) onto a surface of a substrate. The coating is deposited by performing an atomic layer deposition (ALD) process using at least one precursor.

公开(公告)号：US11332488B2

公开(公告)日：2022-05-17

申请号：US16996459

申请日：2020-08-18

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  Atashi Basu ,  David Thompson ,  Nasrin Kazem

IPC: C07F15/06 ,  C23C16/455 ,  C23C16/18

Abstract: Metal coordination complexes comprising at least one diazabutadiene based ligand having a structure represented by: where R1 and R4 are selected from the group consisting of C4-C10 alkyl groups; and R2 and R3 are each independently selected from the group consisting of H, C1-C6 alkyl, cycloalkyl, or aryl groups and the difference in the number of carbons in R2 and R3 is greater than or equal to 2. Processing methods using the metal coordination complexes are also described.

公开(公告)号：US20220301887A1

公开(公告)日：2022-09-22

申请号：US17202675

申请日：2021-03-16

Applicant: Applied Materials, Inc.

Inventor： Nasrin Kazem ,  Jeffrey W. Anthis

IPC: H01L21/3213 ,  H01L21/285

Abstract: Embodiments of this disclosure provide methods for etching ruthenium. A halide-containing-gas is flowed into a substrate processing chamber, and then an oxygen-containing gas is flowed into the substrate processing chamber. The methods may include atomic layer etching (ALE). The methods may be conducted at higher processing chambers, permitting deposition and etching of ruthenium to be conducted in the same processing chamber.

公开(公告)号：US20200377538A1

公开(公告)日：2020-12-03

申请号：US16996459

申请日：2020-08-18

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  Atashi Basu ,  David Thompson ,  Nasrin Kazem

IPC: C07F15/06 ,  C23C16/455 ,  C23C16/18

Abstract: Metal coordination complexes comprising at least one diazabutadiene based ligand having a structure represented by: where R1 and R4 are selected from the group consisting of C4-C10 alkyl groups; and R2 and R3 are each independently selected from the group consisting of H, C1-C6 alkyl, cycloalkyl, or aryl groups and the difference in the number of carbons in R2 and R3 is greater than or equal to 2. Processing methods using the metal coordination complexes are also described.

公开(公告)号：US20240160100A1

公开(公告)日：2024-05-16

申请号：US18222897

申请日：2023-07-17

Applicant: Applied Materials, Inc.

Inventor： Tzu Shun Yang ,  Zhenxing Han ,  Madhur Sachan ,  Lequn Liu ,  Nasrin Kazem ,  Lakmal Charidu Kalutarage ,  Mark Joseph Saly

IPC: G03F7/004 ,  G03F7/00 ,  G03F7/16 ,  G03F7/36 ,  H01L21/027

CPC classification number: G03F7/0042 ,  G03F7/167 ,  G03F7/36 ,  G03F7/70033 ,  H01L21/0274

Abstract: Embodiments disclosed herein may include a method for developing a photopatterned metal oxo photoresist. In an embodiment, the method may include pre-treating the photopatterned metal oxo photoresist with a pre-treatment process, developing the photopatterned metal oxo photoresist with a thermal dry develop process to selectively remove a portion of the photopatterned metal oxo photoresist and form a resist mask. In an embodiment, the thermal dry develop process includes a first sub-operation, and a second sub-operation that is different than the first sub-operation. In an embodiment, the process further includes post-treating the resist mask with a post-treatment process.

公开(公告)号：US10752649B2

公开(公告)日：2020-08-25

申请号：US15947695

申请日：2018-04-06

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  Atashi Basu ,  David Thompson ,  Nasrin Kazem

IPC: C07F15/06 ,  C23C16/455 ,  C23C16/18

Abstract: Metal coordination complexes comprising at least one diazabutadiene based ligand having a structure represented by: where R1 and R4 are selected from the group consisting of C4-C10 alkyl groups; and R2 and R3 are each independently selected from the group consisting of H, C1-C6 alkyl, cycloalkyl, or aryl groups and the difference in the number of carbons in R2 and R3 is greater than or equal to 2. Processing methods using the metal coordination complexes are also described.

公开(公告)号：US20190115255A1

公开(公告)日：2019-04-18

申请号：US16159115

申请日：2018-10-12

Applicant: Applied Materials, Inc.

Inventor： Nasrin Kazem ,  Jeffrey W. Anthis ,  David Thompson

IPC: H01L21/768 ,  C23C16/04 ,  H01L21/285 ,  C23C16/06 ,  C23C16/56

Abstract: Methods for filling a substrate feature with a seamless ruthenium gap fill are described. The methods include depositing a ruthenium film, oxidizing the ruthenium film to form an oxidized ruthenium film, reducing the oxidized ruthenium film to a reduced ruthenium film and repeating the oxidation and reduction processes to form a seamless ruthenium gap fill.

公开(公告)号：US11821070B2

公开(公告)日：2023-11-21

申请号：US17095444

申请日：2020-11-11

Applicant: Applied Materials, Inc.

Inventor： Nasrin Kazem ,  Muthukumar Kaliappan ,  Jeffrey W. Anthis ,  Michael Haverty

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/18

CPC classification number: C23C16/40 ,  C23C16/18 ,  C23C16/45534 ,  C23C16/45553

Abstract: Methods of depositing metal films comprising exposing a substrate surface to a first metal precursor followed by a non-oxygen containing reducing agent comprising a second metal to form a zero-valent first metal film are described. The reducing agent has a metal center that is more electropositive than the metal center of the first metal precursor. In some embodiments, methods of depositing ruthenium films are described in which a substrate surface is exposed to a ruthenium precursor to form a ruthenium containing film on the substrate surface followed by exposure to a non-oxygen containing reducing agent to reduce the ruthenium containing film to a zero-valent ruthenium film and generate an oxidized form of the reducing agent.

公开(公告)号：US20210140041A1

公开(公告)日：2021-05-13

申请号：US17095444

申请日：2020-11-11

Applicant: Applied Materials, Inc.

Inventor： Nasrin Kazem ,  Muthukumar Kaliappan ,  Jeffrey W. Anthis ,  Michael Haverty

IPC: C23C16/40 ,  C23C16/18 ,  C23C16/455

Abstract: Methods of depositing metal films comprising exposing a substrate surface to a first metal precursor followed by a non-oxygen containing reducing agent comprising a second metal to form a zero-valent first metal film are described. The reducing agent has a metal center that is more electropositive than the metal center of the first metal precursor. In some embodiments, methods of depositing ruthenium films are described in which a substrate surface is exposed to a ruthenium precursor to form a ruthenium containing film on the substrate surface followed by exposure to a non-oxygen containing reducing agent to reduce the ruthenium containing film to a zero-valent ruthenium film and generate an oxidized form of the reducing agent.