公开(公告)号：US20240361695A1

公开(公告)日：2024-10-31

申请号：US18644370

申请日：2024-04-24

申请人： ASM IP Holding B.V.

发明人： João Ricardo Antunes Afonso ,  Yiting Sun ,  Fanyong Ran ,  Jerome Samuel Nicolas ,  Zecheng Liu

IPC分类号： G03F7/16 ,  G03F7/004 ,  G03F7/075

CPC分类号： G03F7/167 ,  G03F7/0043 ,  G03F7/0751 ,  G03F7/0755

摘要： Methods of forming structures including an adhesion layer and structures including the adhesion layer are disclosed. The adhesion layer may include nitrogen. The method can include forming a metal oxide resist overlying and in contact with the adhesion layer. Exemplary methods further include forming the photoresist underlayer.

公开(公告)号：US20240337925A1

公开(公告)日：2024-10-10

申请号：US18745039

申请日：2024-06-17

申请人： Inpria Corporation

发明人： Brian J. Cardineau ,  William Earley ,  Truman Wambach

IPC分类号： G03F7/004 ,  C07F7/22 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

CPC分类号： G03F7/0042 ,  C07F7/226 ,  G03F7/0045 ,  G03F7/0048 ,  G03F7/162 ,  G03F7/167 ,  G03F7/2004 ,  G03F7/32

摘要： Patterning with UV and EUV light is described with organo tin sulfide (and selenide) clusters. The clusters are solids at room temperature and are soluble in organic solvents that are not too polar. Irradiation can either fragment a carbon metal bond or crosslink unsaturated organic moieties to stabilize the irradiated material. The irradiated material then resists dissolving in organic solvents so that the un-irradiated material can be contacted with an organic solvent to develop the latent image formed with the radiation. Radiation patternable layers can be formed through coating a solution or through vapor deposition. Corresponding precursor solutions, structures and methods are described.

公开(公告)号：US20240319598A1

公开(公告)日：2024-09-26

申请号：US18594575

申请日：2024-03-04

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Takehiro SATO ,  Shun Kikuchi ,  Ryo Mitsui ,  Seiichiro Tachibana

IPC分类号： G03F7/075 ,  G03F7/09 ,  G03F7/16 ,  G03F7/20

CPC分类号： G03F7/0758 ,  G03F7/094 ,  G03F7/167 ,  G03F7/2016 ,  G03F7/2037

摘要： The present invention is a composition for forming a silicon-containing resist underlayer film, containing a condensation reaction-type thermosetting silicon-containing material (Sx), being a polysiloxane resin, where the material has a non-condensation reactive organic group that reacts with a radical chemical species, the resin includes more than 0 and 70 mol % or less of one or more of a repeating unit represented by the following general formula (Sx-4) and a repeating unit represented by the general formula (Sx-5), and the organic group remains unreacted after a heat-curing reaction of the polysiloxane resin. This provides: a composition for forming a resist underlayer film containing a thermosetting silicon-containing material in photolithography using a high-energy beam, the material improving sensitivity, LWR, and resolution of an upper layer resist and further contributing to the prevention of pattern collapse; and a patterning process using the composition for forming a resist underlayer film.

公开(公告)号：US20240192590A1

公开(公告)日：2024-06-13

申请号：US17905754

申请日：2021-03-24

申请人： Lam Research Corporation

发明人： Sivananda Krishnan Kanakasabapathy ,  Samantha S.H. Tan ,  Jengyi Yu ,  Younghee Lee ,  Alan J. Jensen ,  Da Li

IPC分类号： G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  H01L21/027

CPC分类号： G03F7/0042 ,  G03F7/167 ,  G03F7/2004 ,  H01L21/0274

摘要： The present disclosure relates to stacks having a sensitized resist film, as well as methods and apparatuses for applying such sensitized films. In particular embodiments, the sensitizer can be provided in gas form, and unreacted sensitizer precursors can be recovered after a deposition step.

公开(公告)号：US20240134274A1

公开(公告)日：2024-04-25

申请号：US18546879

申请日：2022-01-28

申请人： Lam Research Corporation

发明人： Timothy William Weidman ,  Eric Calvin Hansen ,  Chenghao Wu

IPC分类号： G03F7/004 ,  G03F7/095 ,  G03F7/16 ,  G03F7/20 ,  G03F7/30 ,  G03F7/36

CPC分类号： G03F7/0043 ,  G03F7/095 ,  G03F7/167 ,  G03F7/2006 ,  G03F7/30 ,  G03F7/36

摘要： The present disclosure relates to a composition formed with a precursor including a C1-4 haloaliphatic or C1-4 aliphatic group or vinyl group (—CH═CH2) and other unsaturated substituents, as well as methods for forming and employing such compositions. In particular embodiments, the haloaliphatic group is a C1-2 haloalkyl group, which in turn provides a resist film having enhanced radiation absorptivity and/or minimal film shrinkage (e.g., upon radiation exposure and/or post-exposure bake). In other embodiments, the aliphatic group is a C1-2 alkyl or vinyl group and other unsaturated substituents, which can be dry deposited. In non-limiting embodiments, the radiation can include extreme ultraviolet (EUV) or deep ultraviolet (DUV) radiation.

公开(公告)号：US11886120B2

公开(公告)日：2024-01-30

申请号：US17356304

申请日：2021-06-23

申请人： Applied Materials, Inc

发明人： Lakmal Charidu Kalutarage ,  Mark Joseph Saly ,  Bhaskar Jyoti Bhuyan ,  Thomas Joseph Knisley ,  Kelvin Chan ,  Regina Germanie Freed ,  David Michael Thompson ,  Susmit Singha Roy ,  Madhur Sachan

IPC分类号： G03F7/16 ,  G03F7/004 ,  C23C16/50 ,  C23C16/455 ,  C23C16/40 ,  H01L21/027

CPC分类号： G03F7/167 ,  C23C16/40 ,  C23C16/45536 ,  C23C16/45553 ,  C23C16/50 ,  G03F7/0043 ,  G03F7/168 ,  H01L21/0274

摘要： Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.

公开(公告)号：US11809081B2

公开(公告)日：2023-11-07

申请号：US17832920

申请日：2022-06-06

申请人： Inpria Corporation

发明人： Stephen T. Meyers ,  Jeremy T. Anderson ,  Brian J. Cardineau ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Alan J. Telecky

IPC分类号： G03F7/16 ,  G03F7/004 ,  G03F7/38 ,  C23C16/40 ,  C23C14/08 ,  C23C16/455 ,  G03F7/30 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40

CPC分类号： G03F7/168 ,  C23C14/086 ,  C23C16/407 ,  C23C16/45523 ,  C23C16/45561 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/162 ,  G03F7/167 ,  G03F7/2004 ,  G03F7/30 ,  G03F7/325 ,  G03F7/38 ,  G03F7/40

摘要： Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.

公开(公告)号：US09711367B1

公开(公告)日：2017-07-18

申请号：US15169922

申请日：2016-06-01

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hung-Chung Chien ,  Hung-Chang Hsieh ,  Jhun Hua Chen ,  Shu-Fang Chen

IPC分类号： H01L21/266 ,  H01L21/308 ,  H01L21/3065

CPC分类号： H01L21/308 ,  G03F7/162 ,  G03F7/164 ,  G03F7/167 ,  G03F7/168 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/265 ,  H01L21/266 ,  H01L21/306 ,  H01L21/3065

摘要： The present disclosure provides a semiconductor fabrication method. The method includes modifying an edge portion of a wafer such that the edge portion are prevented from resist coating; coating a resist layer on the front surface of the wafer, wherein the resist layer is free from the edge portion of the wafer; and performing an exposing process to the resist layer.

公开(公告)号：US20170146909A1

公开(公告)日：2017-05-25

申请号：US14948109

申请日：2015-11-20

申请人： Lam Research Corporation

发明人： David Smith ,  Dennis M. Hausmann

IPC分类号： G03F7/20 ,  G03F7/32

CPC分类号： G03F7/2004 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/167 ,  G03F7/32 ,  G03F7/70033 ,  G03F7/70991 ,  H01L21/0274

摘要： A vacuum-integrated metal oxide-containing hardmask formation process and related vacuum-integrated hardware that combine steps of film formation by vapor deposition and optical lithography results in direct photopatterning of metal oxide-containing hardmasks at substantially reduced cost relative to current approaches.

公开(公告)号：US20140162194A1

公开(公告)日：2014-06-12

申请号：US13897270

申请日：2013-05-17

申请人： APPLIED MATERIALS, INC.

发明人： Jingjing XU ,  Joe Griffith CRUZ ,  Pramit MANNA ,  Deenesh PADHI ,  Bok Hoen KIM ,  Barry L. CHIN

IPC分类号： G03F7/16

CPC分类号： G03F7/167 ,  H01L21/02118 ,  H01L21/02277 ,  H01L21/0271

摘要： Methods and apparatus for forming a sacrificial during a novel process sequence of lithography and photoresist patterning are provided. In one embodiment, a method of processing a substrate having a resist material and an anti-reflective coating material thereon includes depositing an organic polymer layer over the surface of the substrate inside a process chamber using a CVD technique. The CVD technique includes flowing a monomer into a processing region of the process chamber, flowing an initiator into the processing region through one or more filament wires heated to a temperature between about 200° C. and about 450° C., and forming the organic polymer layer. In addition, the organic polymer layer is ashable and can be removed from the surface of the substrate when the resist material is removed from the surface of the substrate.

摘要翻译： 提供了在光刻和光致抗蚀剂图案化的新工艺序列期间形成牺牲的方法和装置。 在一个实施例中，一种在其上处理具有抗蚀剂材料和抗反射涂层材料的衬底的方法包括：使用CVD技术在处理室内的衬底的表面上沉积有机聚合物层。 CVD技术包括使单体流入处理室的处理区域，通过加热至约200℃至约450℃之间的温度的一根或多根细丝丝将引发剂流入加工区域，并形成有机物 聚合物层。 另外，当从基板的表面去除抗蚀剂材料时，有机聚合物层是可灰化的，并且可以从基板的表面去除。