公开(公告)号：US12191115B2

公开(公告)日：2025-01-07

申请号：US16694062

申请日：2019-11-25

Applicant: Applied Materials, Inc.

Inventor： Venkata Sharat Chandra Parimi ,  Xiaoquan Min ,  Zheng John Ye ,  Prashant Kumar Kulshreshtha ,  Vinay K Prabhakar ,  Lu Xu ,  Kwangduk Douglas Lee

IPC: C23C16/458 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  H01L21/02

Abstract: A plasma processing system is described. The system may include a showerhead. The system may further include a first RF generator in electrical communication with the showerhead. The first RF generator may be configured to deliver a first voltage at a first frequency to the showerhead. Additionally, the system may include a second RF generator in electrical communication with a pedestal. The second RF generator may be configured to deliver a second voltage at a second frequency to the pedestal. The second frequency may be less than the first frequency. The system may also include a terminator in electrical communication with the showerhead. The terminator may provide a path to ground for the second voltage. Methods of depositing material using the plasma processing system are described. A method of seasoning a chamber by depositing silicon oxide and silicon nitride on the wall of the chamber is also described.