公开(公告)号：US12191115B2

公开(公告)日：2025-01-07

申请号：US16694062

申请日：2019-11-25

Applicant: Applied Materials, Inc.

Inventor： Venkata Sharat Chandra Parimi ,  Xiaoquan Min ,  Zheng John Ye ,  Prashant Kumar Kulshreshtha ,  Vinay K Prabhakar ,  Lu Xu ,  Kwangduk Douglas Lee

IPC: C23C16/458 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  H01L21/02

Abstract: A plasma processing system is described. The system may include a showerhead. The system may further include a first RF generator in electrical communication with the showerhead. The first RF generator may be configured to deliver a first voltage at a first frequency to the showerhead. Additionally, the system may include a second RF generator in electrical communication with a pedestal. The second RF generator may be configured to deliver a second voltage at a second frequency to the pedestal. The second frequency may be less than the first frequency. The system may also include a terminator in electrical communication with the showerhead. The terminator may provide a path to ground for the second voltage. Methods of depositing material using the plasma processing system are described. A method of seasoning a chamber by depositing silicon oxide and silicon nitride on the wall of the chamber is also described.

公开(公告)号：US11322352B2

公开(公告)日：2022-05-03

申请号：US16853283

申请日：2020-04-20

Applicant: Applied Materials, Inc.

Inventor： Xiaoquan Min ,  Lu Xu ,  Prashant Kumar Kulshreshtha ,  Kwangduk Douglas Lee

IPC: H01L21/033 ,  H01L21/02

Abstract: Disclosed herein is a method and apparatus for forming carbon hard masks to improve deposition uniformity and etch selectivity. The carbon hard mask may be formed in a PECVD process chamber and is a nitrogen-doped carbon hardmask. The nitrogen-doped carbon hardmask is formed using a nitrogen containing gas, an argon containing gas, and a hydrocarbon gas.

公开(公告)号：US20220020589A1

公开(公告)日：2022-01-20

申请号：US16932791

申请日：2020-07-19

Applicant: Applied Materials, Inc.

Inventor： Lu Xu ,  Ratsamee Limdulpaiboon ,  Kwangduk Douglas Lee

IPC: H01L21/033 ,  C23C16/40 ,  C23C16/505 ,  C23C16/04

Abstract: Exemplary methods of semiconductor processing may include forming a first plasma of a silicon-containing precursor and an oxygen-containing precursor within a processing region of a semiconductor processing chamber. The methods may also include depositing a coating from first effluents of the first plasma on surfaces defining the processing region to a target thickness greater than or about 0.5 μm. Forming the first plasma may occur at a first power greater than or about 300 W. The surfaces defining the processing region may include a surface of a faceplate that faces the processing region.

公开(公告)号：US20210159048A1

公开(公告)日：2021-05-27

申请号：US16694062

申请日：2019-11-25

Applicant: Applied Materials, Inc.

Inventor： Venkata Sharat Chandra Parimi ,  Xiaoquan Min ,  Zheng John Ye ,  Prashant Kumar Kulshreshtha ,  Vinay K. Prabhakar ,  Lu Xu ,  Kwangduk Douglas Lee

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  H01L21/02

Abstract: A plasma processing system is described. The system may include a showerhead. The system may further include a first RF generator in electrical communication with the showerhead. The first RF generator may be configured to deliver a first voltage at a first frequency to the showerhead. Additionally, the system may include a second RF generator in electrical communication with a pedestal. The second RF generator may be configured to deliver a second voltage at a second frequency to the pedestal. The second frequency may be less than the first frequency. The system may also include a terminator in electrical communication with the showerhead. The terminator may provide a path to ground for the second voltage. Methods of depositing material using the plasma processing system are described. A method of seasoning a chamber by depositing silicon oxide and silicon nitride on the wall of the chamber is also described.