公开(公告)号：US20230095970A1

公开(公告)日：2023-03-30

申请号：US17893000

申请日：2022-08-22

Applicant: Applied Materials, Inc.

Inventor： Zhiyu HUANG ,  Chi-I LANG ,  Yung-chen LIN ,  Ho-yung HWANG ,  Gabriela ALVA ,  Wayne R. FRENCH

IPC: G03F7/00 ,  G03F7/20 ,  C23C16/04 ,  C23C16/40 ,  C23C16/44

Abstract: Embodiments of the present disclosure generally relate to methods for enhancing photoresist (PR) to have improved profile control. A method for treating a PR includes positioning a workpiece within a process region of a processing chamber, where the workpiece contains a patterned PR disposed on an underlayer, and treating the patterned PR by exposing the workpiece to a sequential infiltration synthesis (SIS) process to produce a treated patterned PR which is denser and harder than the patterned PR. The SIS process includes one or more infiltration cycles of exposing the patterned PR to a precursor containing silicon or boron, infiltrating the patterned PR with the precursor, purging to remove remnants of the precursor, exposing the patterned PR to an oxidizing agent, infiltrating the patterned PR with the oxidizing agent to produce oxide coating disposed on inner surfaces of the patterned PR, and purging to remove remnants of the oxidizing agent.