公开(公告)号：US20220059366A1

公开(公告)日：2022-02-24

申请号：US17369781

申请日：2021-07-07

Applicant: Applied Materials, Inc.

Inventor： Nancy FUNG ,  Gabriela ALVA

IPC: H01L21/3213 ,  H01J37/32

Abstract: A method for patterning a material layer on a substrate includes forming a hard mask layer on a material layer disposed on a substrate, and etching the material layer through the hard mask layer by simultaneously supplying an etching gas mixture and an oxygen containing gas. The etching gas mixture is supplied continuously and the oxygen containing gas is pulsed.

公开(公告)号：US20220059365A1

公开(公告)日：2022-02-24

申请号：US17369812

申请日：2021-07-07

Applicant: Applied Materials, Inc.

Inventor： Nancy FUNG ,  Gabriela ALVA

IPC: H01L21/3213

Abstract: A method for patterning a material layer on a substrate includes forming a hard mask layer on a material layer disposed on a substrate, the material layer comprising a plurality of first layers and a plurality of second layers alternately formed over the substrate, performing a first etch process to form features in the material layer through the hard mask layer by supplying a first etching gas, and performing a second etch process to smooth sidewalls of the features formed in the material layer by suppling a second etching gas. The first etching gas is supplied continuously and the second etching gas is pulsed.

公开(公告)号：US20220189771A1

公开(公告)日：2022-06-16

申请号：US17157548

申请日：2021-01-25

Applicant: Applied Materials, Inc.

Inventor： Gene LEE ,  Gabriela ALVA

IPC: H01L21/033 ,  H01L21/311

Abstract: A structure includes an underlayer formed on a substrate, a mandrel layer formed on the underlayer, and a spacer layer formed on the mandrel layer. The underlayer includes a first material, and the spacer layer includes a second material. The first material is resistant to etching gases used in a first etch process to remove portions of the spacer layer and a second etch process to remove the mandrel layer.

公开(公告)号：US20230095970A1

公开(公告)日：2023-03-30

申请号：US17893000

申请日：2022-08-22

Applicant: Applied Materials, Inc.

Inventor： Zhiyu HUANG ,  Chi-I LANG ,  Yung-chen LIN ,  Ho-yung HWANG ,  Gabriela ALVA ,  Wayne R. FRENCH

IPC: G03F7/00 ,  G03F7/20 ,  C23C16/04 ,  C23C16/40 ,  C23C16/44

Abstract: Embodiments of the present disclosure generally relate to methods for enhancing photoresist (PR) to have improved profile control. A method for treating a PR includes positioning a workpiece within a process region of a processing chamber, where the workpiece contains a patterned PR disposed on an underlayer, and treating the patterned PR by exposing the workpiece to a sequential infiltration synthesis (SIS) process to produce a treated patterned PR which is denser and harder than the patterned PR. The SIS process includes one or more infiltration cycles of exposing the patterned PR to a precursor containing silicon or boron, infiltrating the patterned PR with the precursor, purging to remove remnants of the precursor, exposing the patterned PR to an oxidizing agent, infiltrating the patterned PR with the oxidizing agent to produce oxide coating disposed on inner surfaces of the patterned PR, and purging to remove remnants of the oxidizing agent.

公开(公告)号：US20240419081A1

公开(公告)日：2024-12-19

申请号：US18738731

申请日：2024-06-10

Applicant: Applied Materials, Inc.

Inventor： Lin ZHOU ,  Gabriela ALVA ,  Zhiyu HUANG ,  Yung-chen LIN ,  Chi-I LANG

IPC: G03F7/38 ,  G03F7/004 ,  G03F7/20

Abstract: Embodiments discloses herein describe methods for treating a substrate. In one example, a method of treating a layer of a film stack includes pre-treating a surface of an underlayer of a film stack formed on a substrate and forming a metal oxide in a photoresist layer of the film stack by heating a methyl-containing material in a processing environment proximate a film stack. The film stack includes the photoresist layer disposed on top of and in contact with an underlayer, and the underlayer disposed on top of a substrate. The metal oxide implanted photoresist later is then etched.

公开(公告)号：US20230072732A1

公开(公告)日：2023-03-09

申请号：US17986693

申请日：2022-11-14

Applicant: Applied Materials, Inc.

Inventor： Nancy FUNG ,  Gabriela ALVA

IPC: H01L21/3213 ,  H01J37/32

Abstract: A system and method for patterning a material layer on a substrate includes forming a hard mask layer on a material layer disposed on a substrate, and etching the material layer through the hard mask layer by simultaneously supplying an etching gas mixture and an oxygen containing gas. The etching gas mixture is supplied continuously and the oxygen containing gas is pulsed.