公开(公告)号：US20210183620A1

公开(公告)日：2021-06-17

申请号：US16713615

申请日：2019-12-13

Applicant: Applied Materials, Inc.

Inventor： Wei Tian ,  Toan Q. Tran ,  Dmitry Lubomirsky ,  Greg Toland ,  Satoru Kobayashi

IPC: H01J37/32 ,  H01L21/67

Abstract: Exemplary processing chambers may include a chamber housing at least partially defining an interior region of the semiconductor processing chamber. The chambers may include a showerhead positioned within the chamber housing. The showerhead may at least partially separate the interior region into a remote region and a processing region. Sidewalls of the chamber housing may at least partially define the processing region. The chambers may include a substrate support extending into the processing region and configured to support a substrate. The chambers may include an inductively-coupled plasma source positioned between the showerhead and the substrate support. The inductively-coupled plasma source may include a conductive material disposed within a dielectric material. The inductively-coupled plasma source may form a portion of the sidewalls of the chamber housing.