公开(公告)号：US20150299856A1

公开(公告)日：2015-10-22

申请号：US14625846

申请日：2015-02-19

Applicant: Applied Materials, Inc.

Inventor： Ning LI ,  Wenbo YAN ,  Victor NGUYEN ,  Cong TRINH ,  Mihaela BALSEANU ,  Li-Qun XIA

IPC: C23C16/455 ,  H01L21/3065

CPC classification number: C23C16/45534 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3065

Abstract: Embodiments disclosed herein generally relate to the processing of substrates, and more particularly, relate to methods for accurate control of film thickness using deposition-etch cycles. Particularly, embodiments of the present disclosure may be used in controlling film thickness during filling high aspect ratio features.

Abstract translation: 本文公开的实施例通常涉及衬底的处理，更具体地涉及使用沉积蚀刻循环来精确控制膜厚度的方法。 特别地，本公开的实施例可以用于在填充高纵横比特征期间控制膜厚度。