公开(公告)号：US11702738B2

公开(公告)日：2023-07-18

申请号：US17322242

申请日：2021-05-17

Applicant: Applied Materials, Inc.

Inventor： Yi Zhou ,  Xinyue Chen ,  Mukul Khosla ,  Yangchung Lee

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/40 ,  H01J37/32

CPC classification number: C23C16/4404 ,  C23C16/401 ,  C23C16/4405 ,  C23C16/45557 ,  H01J37/32477 ,  H01J37/32853 ,  H01J37/32862

Abstract: Methods of semiconductor processing may include performing a first plasma treatment within a processing chamber to remove a first carbon-containing material. The methods may include performing a second plasma treatment within the processing chamber to remove a first silicon-containing material. The methods may include depositing a second silicon-containing material on surfaces of the processing chamber. The methods may include depositing a second carbon-containing material overlying the second silicon-containing material.

公开(公告)号：US20220364227A1

公开(公告)日：2022-11-17

申请号：US17322242

申请日：2021-05-17

Applicant: Applied Materials, Inc.

Inventor： Yi Zhou ,  Xinyue Chen ,  Mukul Khosla ,  Yangchung Lee

IPC: C23C16/44 ,  C23C16/40 ,  C23C16/455

Abstract: Methods of semiconductor processing may include performing a first plasma treatment within a processing chamber to remove a first carbon-containing material. The methods may include performing a second plasma treatment within the processing chamber to remove a first silicon-containing material. The methods may include depositing a second silicon-containing material on surfaces of the processing chamber. The methods may include depositing a second carbon-containing material overlying the second silicon-containing material.