公开(公告)号：US20240047185A1

公开(公告)日：2024-02-08

申请号：US17880335

申请日：2022-08-03

Applicant: Applied Materials, Inc.

Inventor： Abhijit A. Kangude ,  Badri N. Ramamurthi ,  Arun Chakravarthy Chakravarthy ,  Vinay K. Prabhakar ,  Dharma Ratnam Srichurnam

IPC: H01J37/32 ,  C23C16/44

CPC classification number: H01J37/32853 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32899 ,  H01J37/32522 ,  C23C16/4405 ,  C23C16/4408 ,  H01J2237/002

Abstract: Exemplary substrate processing systems may include a lid plate. The systems may include a gas feed line having an RPS outlet and a bypass outlet. The systems may include a remote plasma unit supported atop the lid plate. The remote plasma unit may include an inlet and an outlet. The inlet may be coupled with the RPS outlet. The systems may include a center manifold having an RPS inlet coupled with the outlet and a bypass inlet coupled with the bypass outlet. The center manifold may include a plurality of outlet ports. The systems may include a plurality of side manifolds that are fluidly coupled with the outlet ports. Each of the side manifolds may define a gas lumen. The systems may include a plurality of output manifolds seated on the lid plate. Each output manifold may be fluidly coupled with the gas lumen of one of the side manifolds.

公开(公告)号：US20230383397A1

公开(公告)日：2023-11-30

申请号：US18447543

申请日：2023-08-10

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yi-Lin WANG ,  Chin-Szu LEE ,  Hua-Sheng CHIU ,  Yi-Chao CHANG ,  Zih-Shou MUE

IPC: C23C14/34 ,  H01J37/32 ,  B08B17/04 ,  C23C14/50 ,  B08B7/00

CPC classification number: C23C14/34 ,  H01J37/32724 ,  H01J37/32853 ,  B08B17/04 ,  C23C14/50 ,  B08B7/0035 ,  H01J37/32082 ,  H01J2237/332

Abstract: Some implementations described herein provide a shutter disc for use during a conditioning process within a processing chamber of a deposition tool. The shutter disc described herein includes a material having a wave-shaped section to reduce heat transfer to the shutter disc and to provide relief from thermal stresses. Furthermore, the shutter disc includes a deposition of a thin-film material on a backside of the shutter disc, where a diameter of the shutter disc causes a spacing between an inner edge of the thin-film material and an outer edge of a substrate support component. The spacing prevents an accumulation of material between the thin film material and the substrate support component, reduces tilting of the shutter disc due to a placement error, and reduces heat transfer to the shutter disc.

公开(公告)号：US20230343568A2

公开(公告)日：2023-10-26

申请号：US18071444

申请日：2022-11-29

Applicant: Applied Materials, Inc.

Inventor： Yaoling Pan ,  Patrick John Tae ,  Michael D. Willwerth ,  Leonard Tedeschi ,  Kiyki-Shiy N. Shang ,  Mikhail V. Taraboukhine ,  Charles R. Hardy ,  Sivasankar Nagarajan

IPC: H01J37/32 ,  G01N27/22

CPC classification number: H01J37/32935 ,  H01J37/32807 ,  H01J37/32926 ,  G01N27/228 ,  H01J37/32853 ,  H01J2237/24592 ,  H01J2237/24495 ,  H01J2237/24564

Abstract: Capacitive sensors and capacitive sensing data integration for plasma chamber condition monitoring are described. In an example, a plasma chamber monitoring system includes a plurality of capacitive sensors, a capacitance digital converter, and an applied process server coupled to the capacitance digital converter, the applied process server including a system software. The capacitance digital converter includes an isolation interface coupled to the plurality of capacitive sensors, a power supply coupled to the isolation interface, a field-programmable gate-array firmware coupled to the isolation interface, and an application-specific integrated circuit coupled to the field-programmable gate-array firmware.

公开(公告)号：US11702738B2

公开(公告)日：2023-07-18

申请号：US17322242

申请日：2021-05-17

Applicant: Applied Materials, Inc.

Inventor： Yi Zhou ,  Xinyue Chen ,  Mukul Khosla ,  Yangchung Lee

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/40 ,  H01J37/32

CPC classification number: C23C16/4404 ,  C23C16/401 ,  C23C16/4405 ,  C23C16/45557 ,  H01J37/32477 ,  H01J37/32853 ,  H01J37/32862

Abstract: Methods of semiconductor processing may include performing a first plasma treatment within a processing chamber to remove a first carbon-containing material. The methods may include performing a second plasma treatment within the processing chamber to remove a first silicon-containing material. The methods may include depositing a second silicon-containing material on surfaces of the processing chamber. The methods may include depositing a second carbon-containing material overlying the second silicon-containing material.

公开(公告)号：US20180318890A1

公开(公告)日：2018-11-08

申请号：US15969626

申请日：2018-05-02

Applicant: Lam Research Corporation

Inventor： Amir A. YASSERI ,  Hong SHIH ,  John DAUGHERTY ,  Duane OUTKA ,  Lin XU ,  Armen AVOYAN ,  Cliff LA CROIX ,  Girish HUNDI

IPC: B08B7/04 ,  H01J37/32 ,  B08B3/12 ,  B08B3/04 ,  B08B3/14 ,  B08B5/02

CPC classification number: B08B7/04 ,  B08B3/048 ,  B08B3/12 ,  B08B3/14 ,  B08B5/02 ,  H01J37/32853

Abstract: An apparatus for conditioning a component of a processing chamber is provided. A tank for holding a megasonic conditioning solution is provided. A mount holds the component immersed in a megasonic conditioning solution, when the tank is filled with the megasonic conditioning solution. A megasonic conditioning solution inlet system delivers the megasonic conditioning solution to the tank. A megasonic transducer head comprises at least one megasonic transducer to provide megasonic energy to the megasonic conditioning solution, wherein the megasonic energy is delivered to the component via the megasonic conditioning solution. A megasonic conditioning solution drain system drains the megasonic conditioning solution from the tank at a location above where the component is held in the megasonic conditioning solution. An actuator moves the megasonic transducer head across the tank.

公开(公告)号：US09773665B1

公开(公告)日：2017-09-26

申请号：US15371142

申请日：2016-12-06

Applicant: APPLIED MATERIALS, INC.

Inventor： Weimin Zeng ,  Thanh X. Nguyen ,  Yong Cao

IPC: H01L21/02 ,  C23C14/22 ,  C23C14/06

CPC classification number: C23C14/22 ,  C23C14/0036 ,  C23C14/024 ,  C23C14/0652 ,  C23C14/185 ,  C23C14/35 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32853 ,  H01L21/02631

Abstract: Methods and apparatus for reducing particles generated in a process carried out in a process chamber are provided herein. In some embodiments, a process kit shield includes: a body having a surface facing a processing volume of a physical vapor deposition (PVD) process chamber, wherein the body is composed of aluminum oxide (Al2O3), and a silicon nitride layer on the surface of the body.

公开(公告)号：US20170194561A1

公开(公告)日：2017-07-06

申请号：US15260351

申请日：2016-09-09

Applicant: Hitachi High-Technologies Corporation

Inventor： Makoto SUYAMA ,  Naohiro YAMAMOTO ,  Masato ISHIMARU ,  Hidenori TOYOOKA ,  Norihiro HOSAKA

IPC: H01L43/12 ,  B08B7/00 ,  H01J37/32 ,  B08B9/08 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/12 ,  B08B7/0035 ,  B08B9/08 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32165 ,  H01J37/32651 ,  H01J37/32853 ,  H01J37/32862 ,  H01J2237/334 ,  H01J2237/335 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment of the present invention, there is provided a plasma processing method for forming a pattern of a mask on a laminated film of a magnetic film and a metal oxide film, and the plasma processing method includes: plasma etching the magnetic film in a chamber; and after the plasma etching, plasma cleaning the chamber, wherein the plasma cleaning performs first plasma cleaning of plasma cleaning using a gas mixture of chlorine element-containing gas and boron trichloride gas, and after the first plasma cleaning, second plasma cleaning of removing boron remaining in the chamber.

公开(公告)号：US20160379833A1

公开(公告)日：2016-12-29

申请号：US14753735

申请日：2015-06-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD

Inventor： Shih-Ping HONG ,  Yu-Cheng LIU

IPC: H01L21/3065 ,  B08B7/00 ,  B08B9/08 ,  H01L21/02 ,  H01L21/32

CPC classification number: H01L21/02071 ,  B08B7/0035 ,  B08B9/0865 ,  C23C16/4405 ,  H01J37/3244 ,  H01J37/32834 ,  H01J37/32853 ,  H01J37/32862 ,  H01J37/32871 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/02041 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02334 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32136 ,  H01L21/67069 ,  H01L21/76802 ,  H01L21/76814

Abstract: A method for cleaning a plasma processing chamber is provided. The method includes introducing an organic gas into a plasma processing chamber. The organic gas includes an organic compound including carbon and hydrogen. The method includes generating an organic plasma by exciting the organic gas. The organic plasma reacts with metal compound residues over an interior surface of the plasma processing chamber to volatilize the metal compound residues into a gaseous metal compound. The method includes removing the gaseous metal compound from the plasma processing chamber.

Abstract translation: 提供了一种用于清洁等离子体处理室的方法。 该方法包括将有机气体引入等离子体处理室。 有机气体包括碳和氢的有机化合物。 该方法包括通过激发有机气体产生有机等离子体。 有机血浆与等离子体处理室的内表面上的金属化合物残留物反应，使金属化合物残留物挥发成气态金属化合物。 该方法包括从等离子体处理室中除去气态金属化合物。

公开(公告)号：US20160319422A1

公开(公告)日：2016-11-03

申请号：US15108119

申请日：2015-01-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Shinichi KURITA ,  Jozef KUDELA ,  John M. WHITE ,  Dieter HAAS

IPC: C23C16/04 ,  H01L51/52 ,  H01J37/32 ,  H01L21/67 ,  H01L21/677 ,  H01L51/56 ,  H01L21/687

CPC classification number: C23C16/45548 ,  C23C16/042 ,  C23C16/4402 ,  C23C16/54 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32467 ,  H01J37/32513 ,  H01J37/32715 ,  H01J37/32834 ,  H01J37/32853 ,  H01J37/32899 ,  H01J2237/327 ,  H01J2237/3321 ,  H01L21/6719 ,  H01L21/67748 ,  H01L21/67751 ,  H01L21/68742 ,  H01L51/0011 ,  H01L51/5237 ,  H01L51/5253 ,  H01L51/56

Abstract: The present disclosure relates to methods and apparatus for a thin film encapsulation (TFE). A process kit for TFE is provided. The process kit is an assembly including a window, a mask parallel to the window, and a frame. The process kit further includes an inlet channel for flowing process gases into the volume between the window and the mask, an outlet channel for pumping effluent gases away from the volume between the window and the mask, and seals for inhibiting the flow of process gases and effluent gases to undesired locations. A method of performing TFE is provided, including placing a substrate under the mask of the above described process kit, flowing process gases into the process kit, and activating some of the process gases into reactive species by means of an energy source within a processing chamber.

Abstract translation: 本公开涉及薄膜封装（TFE）的方法和装置。 提供TFE的工艺套件。 处理套件是包括窗口，与窗口平行的掩模和框架的组件。 工艺组件还包括用于将工艺气体流入窗口和面罩之间的体积的入口通道，用于将流出气体从窗口和面罩之间的体积排出的出口通道，以及用于抑制工艺气体流动的密封件， 流出气体到不需要的位置。 提供了一种执行TFE的方法，包括将基底放置在上述处理试剂盒的掩模之下，将工艺气体流入工艺试剂盒，并通过处理室内的能量源将一些工艺气体活化成反应性物质 。

公开(公告)号：US20160284523A1

公开(公告)日：2016-09-29

申请号：US14777865

申请日：2014-03-28

Applicant: The Chemours Company FC, LLC

Inventor： GARY LOH ,  MARIO JOSEPH NAPPA ,  HAO-CHUN LEE ,  TAI-CHEN LEE

IPC: H01J37/32 ,  C11D7/30 ,  C09K13/00 ,  C23C16/44

CPC classification number: H01J37/32862 ,  C09K13/00 ,  C11D7/30 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32853 ,  H01J2237/334

Abstract: The present invention relates to hydrofluorolefin compositions useful for removing surface deposits in CVD chambers, and relates to methods for removing surface deposits from the interior of a chemical vapor deposition chamber by using an activated gas mixture created by activating a gas mixture in the chamber or in a remote chamber, where the gas mixture comprises a hydrofluorolefin.

Abstract translation: 本发明涉及用于除去CVD室中的表面沉积物的氢氟烯烃组合物，并且涉及通过使用通过活化气室中的气体混合物或在室内或 远程室，其中气体混合物包含氢氟烯烃。