公开(公告)号：US20190252523A1

公开(公告)日：2019-08-15

申请号：US15896827

申请日：2018-02-14

Applicant: Applied Materials, Inc.

Inventor： Yung-Chen LIN ,  Qingjun ZHOU ,  Ying ZHANG

IPC: H01L29/66 ,  H01L21/8234 ,  H01L21/306 ,  H01L21/308

CPC classification number: H01L29/66795 ,  H01L21/02538 ,  H01L21/02636 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/3086 ,  H01L21/823431 ,  H01L29/7831

Abstract: Embodiments described herein relate to substrate processing methods. The methods include forming a patterned hardmask material on a substrate, forming first mandrel structures on exposed regions of the substrate, and depositing a gap fill material on the substrate over the hardmask material and the first mandrel structures. The first mandrel structures are removed to form second mandrel structures comprising the hardmask material and the gap fill material and the substrate is etched using the second mandrel structures as a mask to form fin structures.