公开(公告)号：US20030189024A1

公开(公告)日：2003-10-09

申请号：US10118763

申请日：2002-04-08

Applicant: Applied Materials Inc.

Inventor： Anisul Khan ,  Sharma V. Pamarthy ,  Sanjay Thekdi ,  Ajay Kumar

IPC: C23F001/00

CPC classification number: H01L21/30655

Abstract: Openings of variable shape are made sequentially by alternately etching an opening in silicon and depositing a conformal fluorocarbon polymer on the sidewalls. This polymer protects the sidewalls of the opening from further etching. An isotropic etch can be carried out to change the profile of the etched feature, and for lift-off of the etched feature from the silicon substrate.

Abstract translation: 通过交替蚀刻硅中的开口并在侧壁上沉积共形氟碳聚合物来顺序地制备可变形状的开口。 该聚合物保护开口的侧壁进一步蚀刻。 可以进行各向同性蚀刻以改变蚀刻特征的轮廓，并且用于从硅衬底剥离蚀刻的特征。

公开(公告)号：US20030153195A1

公开(公告)日：2003-08-14

申请号：US10076721

申请日：2002-02-13

Applicant: Applied Materials, Inc.

Inventor： Elisabeth Weikmann ,  Aduato Diaz JR. ,  Sharma V. Pamarthy ,  Ajay Kumar ,  Padmapani C. Nallan

IPC: H01L021/302 ,  H01L021/461

CPC classification number: H01J37/321 ,  H01J37/32137

Abstract: A method and apparatus for modulating the bias power applied to a wafer support pedestal within a plasma etch reactor. The modulation has an on/off duty cycle of between 10 and 90 percent. Such modulation of the bias power substantially improves the verticality of the etched features located near the edge of a semiconductor wafer as the wafer is being etched in a plasma etch reactor.

Abstract translation: 一种用于调制施加到等离子体蚀刻反应器内的晶片支撑基座的偏置功率的方法和装置。 调制具有10％到90％的开/关占空比。 当在等离子体蚀刻反应器中蚀刻晶片时，偏置功率的这种调制基本上改善了位于半导体晶片的边缘附近的蚀刻特征的垂直度。

公开(公告)号：US20040033697A1

公开(公告)日：2004-02-19

申请号：US10219885

申请日：2002-08-14

Applicant: Applied Materials, Inc. ,  Infineon Technologies

Inventor： Ajay Kumar ,  Anisul H. Khan ,  Dragan Podlesnik ,  Sharma V. Pamarthy ,  Axel Henke ,  Stephan Wege ,  Virinder Grewal

IPC: H01L021/302 ,  H01L021/461

CPC classification number: H01J37/32082 ,  H01J2237/3347 ,  H01L21/3065 ,  H01L21/30655

Abstract: A method for operating a plasma reactor to etch high-aspect-ratio features on a workpiece in a vacuum chamber. The method comprises the performance of an etch process followed by a flash process. During the etch process, a first gas is supplied into the vacuum chamber, and a plasma of the first gas is maintained for a first period of time. The plasma of the first gas comprises etchant and passivant species. During the flash process, a second gas comprising a deposit removal gas is supplied into the vacuum chamber, and a plasma of the second gas is maintained for a second period of time. The DC voltage between the workpiece and the plasma of the second gas during the second period of time is significantly less than the DC voltage between the workpiece and the plasma of the first gas during the first period of time.

Abstract translation: 一种用于操作等离子体反应器以蚀刻真空室中的工件上的高纵横比特征的方法。 该方法包括执行闪光处理之后的蚀刻工艺。 在蚀刻工艺期间，将第一气体供应到真空室中，并且第一气体的等离子体保持第一时间段。 第一气体的等离子体包括蚀刻剂和钝化物质。 在闪蒸过程中，将包含沉积物去除气体的第二气体供应到真空室中，并且将第二气体的等离子体保持第二时间段。 在第二时间段期间，工件与第二气体的等离子体之间的直流电压明显小于在第一时间段内第一气体的工件与等离子体之间的直流电压。